Ruthenium as an underlayer for tungsten film deposition

ABSTRACT

Embodiments of the invention provide a method for depositing materials on substrates. In one embodiment, the method includes depositing a barrier layer containing tantalum or titanium on a substrate, depositing a ruthenium layer or a cobalt layer on the barrier layer, and depositing a tungsten bulk layer thereover. In some examples, the barrier layer may contain tantalum nitride deposited by an atomic layer deposition (ALD) process, the tungsten bulk layer may be deposited by a chemical vapor deposition (CVD) process, and the ruthenium or cobalt layer may be deposited by an ALD process. The ruthenium or cobalt layer may be exposed to a soak compound, such as hydrogen, diborane, silane, or disilane, during a soak process prior to depositing the tungsten bulk layer. In some examples, a tungsten nucleation layer may be deposited on the ruthenium or cobalt layer, such as by ALD, prior to depositing the tungsten bulk layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. Ser. No. 11/009,331(APPM/009205), filed Dec. 10, 2004, which is herein incorporated byreference in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

Embodiments of the invention generally relate to methods for barrierlayer, ruthenium layer and tungsten layer formation and, moreparticularly to ruthenium deposition processes for use in tungstenintegration.

2. Description of the Related Art

Sub-quarter micron multilevel metallization is one of the keytechnologies for the next generation of very large scale integration(VLSI). The multilevel interconnects that lie at the heart of thistechnology possess high aspect ratio features, including contacts, vias,lines, or other apertures. Reliable formation of these features is veryimportant to the success of VLSI and to the continued effort to increasequality and circuit density on individual substrates. Therefore, thereis a great amount of ongoing effort being directed to the formation ofvoid-free features having high aspect ratios of 10:1 (height:width) orgreater.

Tungsten, replacing copper and aluminum, has recently become a choicemetal for filling VLSI features, such as sub-micron high aspect ratio,interconnect features. However, tungsten has a propensity to disjoinfrom dielectric materials, such as polysilicon, silicon germanium andsilicon oxides. The disjoining may minimally cause an increase in thecontact resistance of the circuit if not cause complete failure of theelectronic device. Adhesion layers or barrier layers are, therefore,deposited prior to tungsten metallization to prevent or impede thedisjoining of the tungsten material on the substrate surface.

A typical sequence for forming an interconnect includes depositing oneor more non-conductive layers, etching at least one of the layer(s) toform one or more features therein, depositing a barrier layer in thefeature(s) and depositing one or more conductive layers, such astungsten, to fill the feature. The barrier layer typically includes arefractory metal nitride and/or silicide, such as titanium or tantalum.Of this group, tantalum nitride is one of the most desirable materialsfor use as an adhesion/barrier layer because it has one of the lowestresistivities of the metal nitrides and makes a strong adhesion layerfor tungsten metallization. A metal nitride layer, such as tantalumnitride, is typically deposited using conventional depositiontechniques, such as physical vapor deposition (PVD) and chemical vapordeposition (CVD).

Conventional deposition processes have difficulty forming interconnectstructures because these processes have problems filling sub-micronstructures where the aspect ratio exceeds 4:1, and particularly wherethe aspect ratio exceeds 10:1. Often, the barrier layer bridges theopening of a narrow feature, resulting in the formation of one or morevoids or discontinuities within the feature. Since voids increase theresistance and reduce the electromigration resistance of the feature,features having voids make poor and unreliable electrical contacts. Someprocesses have been developed to deposit barrier layers by atomic layerdeposition (ALD), but tantalum nitride layers deposited by ALD are notcommonly found in electronic devices. The lack of commercialization oftantalum nitride deposition by ALD is probably due to the additionalcost of hardware and integration of the chamber into existing processplatforms.

Alternatively, a thin film of a noble metal such as, ruthenium,palladium, platinum, cobalt, nickel and rhodium, among others may beused as a barrier layer or an underlayer for the metal-filled vias andlines. Usually these noble metal underlayers are deposited as barrierlayers on dielectric materials for copper seed. However, ALD processesto deposit noble metals remain scarce in the art relative to transitionmetal ALD processes, such as to deposit titanium, tungsten or tantalum.

Therefore, a need exists, for a method to deposit an adhesion/barrierlayer and tungsten in high aspect ratio interconnect features havinggood step coverage, strong adhesion and low electrical resistivity.

SUMMARY OF THE INVENTION

In one example, a method for depositing a tungsten-containing film on asubstrate is provided which includes depositing a metal-containingbarrier layer on the substrate, depositing a ruthenium layer on themetal-containing layer, depositing a tungsten nucleation layer on theruthenium layer, and depositing a tungsten bulk layer on the tungstennucleation layer.

In another example, a method for depositing a tungsten-containing filmon a substrate is provided which includes depositing atantalum-containing barrier layer on the substrate by a first atomiclayer deposition process, depositing a ruthenium layer on thetantalum-containing layer by a second atomic layer deposition process,exposing the ruthenium layer to a soak process, and depositing atungsten nucleation layer on the ruthenium layer by a third atomic layerdeposition process.

In another example, a method for depositing a tungsten-containing filmon a substrate is provided which includes depositing a ruthenium layeron the substrate by a first atomic layer deposition process, exposingthe ruthenium layer to a soak process, depositing a tungsten nucleationlayer on the ruthenium layer by a second atomic layer depositionprocess, and depositing a bulk tungsten layer to the nucleation tungstenlayer.

In another example, a method for depositing a tungsten-containing filmon a substrate is provided which includes depositing a ruthenium layeron the substrate by a first atomic layer deposition process, andexposing the ruthenium layer to a soak process, and depositing atungsten nucleation layer on the ruthenium layer by a second atomiclayer deposition process. The soak process may include flowing a soakcompound for a predetermined time of about 5 seconds to about 90seconds. The soak compound may include hydrogen, borane, diborane,silane, disilane, trisilane, dichlorosilane, derivatives thereof andcombinations thereof.

In another example, a method of forming a film on a substrate surface isprovided which includes positioning a substrate containing atantalum-containing layer within a process chamber and depositing aruthenium layer on the tantalum-containing layer. The ruthenium layermay be deposited by a deposition process that includes exposing aruthenium-containing compound to the substrate surface, purging theprocess chamber with a purge gas, reducing the ruthenium-containingcompound with a reagent to form a ruthenium layer on the substratesurface, and purging the process chamber with the purge gas. The methodfurther includes depositing a tungsten layer on the ruthenium layer. Theruthenium-containing compound may be selected from the group consistingof bis(cyclopentadienyl)ruthenium compounds,bis(alkylcyclopentadienyl)ruthenium compounds,bis(dialkylcyclopentadienyl)ruthenium compounds,bis(pentadienyl)ruthenium compounds, bis(alkylpentadienyl)rutheniumcompounds and bis(dialkylpentadienyl)ruthenium compounds.

In another example, a method of forming a ruthenium layer on a substratefor use in integrated circuit fabrication is provided which includesdepositing a barrier layer on a substrate surface by a first ALDprocess. The barrier layer may include tantalum, tantalum nitride,tantalum silicon nitride, titanium, titanium nitride, titanium siliconnitride, tungsten, tungsten nitride and combinations thereof. The methodfurther includes depositing the ruthenium layer on the barrier layer bya second ALD process and depositing a tungsten layer on the rutheniumlayer. The second ALD process includes exposing the barrier layer to aruthenium-containing compound within a process chamber, chemisorbing aruthenium-containing layer on the barrier layer, exposing theruthenium-containing layer to a reagent, and reacting the reagent withthe ruthenium-containing layer to form the ruthenium layer on thebarrier layer.

In another example, a method of forming a ruthenium layer on a substratefor use in integrated circuit fabrication is provided which includesdepositing a barrier layer on a substrate surface by a first depositionprocess. The barrier may include tantalum, tantalum nitride, tantalumsilicon nitride, titanium, titanium nitride, titanium silicon nitride,tungsten, tungsten nitride and combinations thereof. The method furtherincludes depositing the ruthenium layer on the barrier layer by a firstALD process that includes sequentially exposing the barrier layer to aruthenium-containing compound and a reagent and depositing a tungstenlayer on the ruthenium layer by a second ALD process that includessequentially exposing the ruthenium layer to a tungsten-containingcompound and a reductant.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentinvention are attained and can be understood in detail, a moreparticular description of the invention, briefly summarized above, maybe had by reference to the embodiments thereof which are illustrated inthe appended drawings. It is to be noted, however, that the appendeddrawings illustrate only typical embodiments of this invention and aretherefore not to be considered limiting of its scope, for the inventionmay admit to other equally effective embodiments.

FIG. 1 depicts a process sequence according to one embodiment describedherein;

FIGS. 2A-2D illustrate schematic cross-sectional views of an integratedcircuit fabrication sequence;

FIG. 3 illustrates a process sequence for tantalum nitride formationusing cyclical deposition techniques according to one embodimentdescribed herein;

FIG. 4 illustrates a process sequence for tantalum nitride formationusing cyclical deposition techniques according to an alternateembodiment described herein;

FIG. 5 illustrates a process sequence for ruthenium layer formationusing cyclical deposition techniques according to one embodimentdescribed herein;

FIG. 6 illustrates a process sequence for ruthenium layer formationusing cyclical deposition techniques according to an alternateembodiment described herein;

FIG. 7 illustrates a process sequence for tungsten-containing layerformation using deposition techniques according to one embodimentdescribed herein;

FIG. 8 depicts a schematic cross-sectional view of a process chamberthat may be used to perform a cyclical deposition process describedherein;

FIG. 9A depicts a schematic view of a process platform that may be usedduring processes described herein; and

FIG. 9B depicts a schematic view of an alternate process platform thatmay be used during processes described herein.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

A method for depositing multiple layers of materials to form electronicdevices is disclosed. Generally, the method includes depositing abarrier layer on a substrate surface, depositing a ruthenium layer onthe barrier layer, depositing a tungsten nucleation layer on theruthenium layer, and depositing a tungsten bulk layer on the tungstennucleation layer. During the deposition of any of the aforementionedlayers, the method may include a variety of deposition techniquesincluding atomic layer deposition (ALD), chemical vapor deposition(CVD), physical vapor deposition (PVD), electrochemical plating (ECP)and/or electroless plating. Preferably, the method utilizes ALDprocesses to deposit the barrier layer, the ruthenium layer, thetungsten nucleation layer and the tungsten bulk layer. Also, a pre-soakprocess to nucleate an underlayer may be used prior to starting any ofthe deposition processes, for example, a ruthenium layer may be exposedto a pre-soak process that includes a reductant prior to the depositionof a tungsten nucleation layer or a tungsten nucleation layer may beexposed to a soak process prior to the deposition of a tungsten bulklayer.

A “substrate surface” as used herein refers to any substrate or materialsurface formed on a substrate upon which film processing is performed.For example, a substrate surface on which processing may be performedinclude materials such as monocrystalline, polycrystalline or amorphoussilicon, strained silicon, silicon on insulator (SOI), doped silicon,silicon germanium, germanium, gallium arsenide, glass, sapphire, siliconoxide, silicon nitride, silicon oxynitride and/or carbon doped siliconoxides, such as SiO_(x)C_(y), for example, BLACK DIAMOND® low-kdielectric, available from Applied Materials, Inc., located in SantaClara, Calif. Substrates may have various dimensions, such as 200 mm or300 mm diameter wafers, as well as, rectangular or square panes.Embodiments of the processes described herein deposit barrier and/oradhesive layers on many substrates and surfaces, especially, dielectricmaterials. Substrates on which embodiments of the invention may beuseful include, but are not limited to semiconductor wafers, such ascrystalline silicon (e.g., Si<100> or Si<111>), silicon oxide, strainedsilicon, silicon germanium, doped or undoped polysilicon, doped orundoped silicon wafers, and patterned or non-patterned wafers.

“Atomic layer deposition” or “cyclical deposition” as used herein refersto the sequential introduction of two or more reactive compounds todeposit a layer of material on a substrate surface. The two, three ormore reactive compounds may alternatively be introduced into a reactionzone of a processing chamber. Usually, each reactive compound isseparated by a time delay to allow each compound to adhere and/or reacton the substrate surface. In one aspect, a first precursor or compound Ais pulsed into the reaction zone followed by a first time delay. Next, asecond precursor or compound B is pulsed into the reaction zone followedby a second delay. During each time delay a purge gas, such as nitrogen,is introduced into the processing chamber to purge the reaction zone orotherwise remove any residual reactive compound or by-products from thereaction zone. Alternatively, the purge gas may flow continuouslythroughout the deposition process so that only the purge gas flowsduring the time delay between pulses of reactive compounds. The reactivecompounds are alternatively pulsed until a desired film or filmthickness is formed on the substrate surface. In either scenario, theALD process of pulsing compound A, purge gas, pulsing compound B andpurge gas is a cycle. A cycle may start with either compound A orcompound B and continue the respective order of the cycle untilachieving a film with the desired thickness.

A “pulse” as used herein is intended to refer to a quantity of aparticular compound that is intermittently or non-continuouslyintroduced into a reaction zone of a processing chamber. The quantity ofa particular compound within each pulse may vary over time, depending onthe duration of the pulse. The duration of each pulse is variabledepending upon a number of factors such as, for example, the volumecapacity of the process chamber employed, the vacuum system coupledthereto, and the volatility/reactivity of the particular compounditself. A “half-reaction” as used herein to refer to a pulse of aprecursor followed by a purge step.

Barrier Layer Formation

FIG. 1 depicts a process 100 according to one embodiment describedherein for fabricating an integrated circuit. Process 100 includes steps102-110, wherein during step 102, a barrier layer, such as ametal-containing barrier layer is deposited on a substrate surface. Aruthenium layer is deposited on the barrier layer during step 104,preferably, by an ALD process. Subsequently in step 106, the rutheniumlayer is exposed to a pre-soak process that may include a reductant,such as silane or diborane. During step 108, a tungsten nucleation layeris deposited on the ruthenium layer. Preferably, the tungsten nucleationlayer is deposited by an ALD process. Thereafter at step 110, a tungstenbulk layer is deposited on the tungsten nucleation layer, preferably bya CVD process. Optionally, a pre-soak process similarly used in step106, may be conducted between steps 102 and 104, as well as betweensteps 108 and 110.

Process 100 includes steps 102-110 that correspond to FIGS. 2A-2Dillustrating schematic cross-sectional views of a substrate at differentstages of an interconnect fabrication sequence incorporating oneembodiment of the present invention. FIG. 2A illustrates across-sectional view of substrate 200 having a metal contact layer 204and dielectric layer 202 formed thereon. Substrate 200 may comprise asemiconductor material such as, for example, silicon, germanium, orgallium arsenide. Dielectric layer 202 may comprise an insulatingmaterial such as, silicon dioxide, silicon nitride, SOI, siliconoxynitride and/or carbon-doped silicon oxides, such as SiO_(x)C_(y), forexample, BLACK DIAMOND® low-k dielectric, available from AppliedMaterials, Inc., located in Santa Clara, Calif. Metal contact layer 204comprises a conductive material, for example, tungsten, copper, aluminumand alloys thereof. A via or aperture 203 may be defined in thedielectric layer 202 to provide openings over metal contact layer 204.Aperture 203 may be defined in dielectric layer 202 using conventionallithography and etching techniques.

Barrier layer 206 may be formed on dielectric layer 202 as well as inaperture 203. Barrier layer 206 may include one or more barriermaterials such as, for example, tantalum, tantalum nitride, tantalumsilicon nitride, titanium, titanium nitride, titanium silicon nitride,tungsten nitride, silicon nitride, ruthenium nitride, derivativesthereof, alloys thereof and combinations thereof. Barrier layer 206 maybe formed using a suitable deposition process, such as ALD, CVD, PVD orelectroless deposition. For example, tantalum nitride may be depositedusing a CVD process or an ALD process wherein tantalum-containingcompound or tantalum precursor (e.g., PDMAT) and nitrogen-containingcompound or nitrogen precursor (e.g., ammonia) are reacted. In oneembodiment, tantalum and/or tantalum nitride is deposited as barrierlayer 206 by an ALD process as described in commonly assigned U.S. Ser.No. 10/281,079, filed Oct. 25, 2002, and published as US 2003-0121608,which is herein incorporated by reference. In one example, a Ta/TaNbilayer may be deposited as barrier layer 206, wherein the tantalumlayer and the tantalum nitride layer are independently deposited by ALD,CVD and/or PVD processes.

FIGS. 3 and 4 illustrate a process sequence for tantalum nitrideformation using an ALD process or similar cyclical depositiontechniques. In one embodiment, a tantalum nitride layer is deposited byan ALD process as barrier layer 206. During process 300 in FIG. 3, aconstant flow of carrier gas or flow gas is administered into theprocess chamber. At step 302, the chamber conditions are adjusted, suchas temperature and pressure. During deposition, the substrate may bemaintained approximately below a thermal decomposition temperature of aselected tantalum-containing compound. An exemplary heater temperaturerange to be used with tantalum-containing compounds identified herein isapproximately between about 20° C. and about 500° C. at a chamberpressure less than about 100 Torr, preferably less than about 50 Torr.When the tantalum-containing gas contains PDMAT, the heater temperatureis preferably from about 100° C. to about 400° C., more preferably fromabout 175° C. to 250° C., and the chamber pressure is maintained in arange from about 1.0 Torr to about 5.0 Torr.

During step 304, the substrate is exposed to a carrier gas stream,generally, a steady stream of carrier gas. The carrier gas may includenitrogen, argon, hydrogen, helium, forming gas or combinations thereof.Preferably, the substrate is exposed to a stream of nitrogen. Duringstep 306, a pulse of a tantalum-containing compound or tantalumprecursor, such as pentakis(dimethylamino)tantalum (PDMAT or Ta(NMe₂)₅),is introduced into the process chamber. The tantalum-containing compoundmay be provided with the aid of a carrier gas or purge gas independentfrom the stream of carrier gas. The tantalum precursor is exposed to thesubstrate to form a tantalum-containing layer on the substrate surface.The tantalum-containing compound adsorbs on the substrate surface,generally forming a monolayer thick film. During step 308, a pulse of anitrogen-containing compound or nitrogen precursor, such as ammonia, maybe introduced into the process chamber by submitting a nitrogenprecursor pulse to the carrier gas stream. The nitrogen precursor reactswith the tantalum-containing layer to form a tantalum nitride layer onthe substrate surface. A carrier gas may also be used to help deliverthe nitrogen precursor.

At step 310, the thickness of the tantalum nitride layer is determined.If the predetermined thickness is not achieved, then steps 304-308 aresequentially repeated in a cycle until the predetermined thickness isachieved. Once the predetermined thickness of the tantalum nitride layeris achieved, then process 300 is ceased at step 312. Process 300provides a tantalum nitride layer in a thickness from about 0.5 Å toabout 1.0 Å per cycle.

Generally, a tantalum nitride layer is generally deposited with a filmthickness from about 5 Å to about 150 Å, preferably from about 5 Å toabout 50 Å, such as about 15 Å. In one example, a tantalum nitride layeris deposited to a via with sidewall coverage of about 50 Å or less,preferably about 20 Å or less and more preferably 10 Å or less. Atantalum nitride layer with a thickness of about 10 Å or less isbelieved to be a sufficient thickness in the application as a barrierlayer to prevent diffusion of subsequently deposited metals, such asruthenium. In one aspect, a thin barrier layer may be used to advantagein filling sub-micron (e.g., less than 0.15 μm) and smaller featureshaving high aspect ratios (e.g., greater than 30 to 1).

In another embodiment, a purge gas may be provided in pulsessequentially between each pulse of the tantalum-containing compound andnitrogen-containing compound, as depicted by process 400 in FIG. 4.During step 402, the chamber conditions are adjusted, such astemperature and pressure. During a deposition process, the substrate maybe maintained approximately below a thermal decomposition temperature ofa selected tantalum-containing compound. An exemplary heater temperaturerange to be used with tantalum-containing compounds identified herein isapproximately between about 20° C. and about 500° C. at a chamberpressure of about 100 Torr or less, preferably of about 50 Torr or less.When the tantalum-containing gas contains PDMAT, the heater temperatureis preferably from about 100° C. to about 400° C., more preferably fromabout 175° C. to about 250° C., and the chamber pressure is maintainedin a range from about 1.0 Torr to about 5.0 Torr.

During step 404, a first pulse purge gas is administered into theprocess chamber. The purge gas may be the same or different gas used asa carrier gas. Generally, the purge gas may include nitrogen, argon,hydrogen, helium, forming gas or combinations thereof. At step 406, apulse of tantalum-containing compound, such as PDMAT, is introduced intothe process chamber. The tantalum-containing compound may be providedwith the aid of a carrier gas or purge gas independent from the streamof carrier gas. The tantalum-containing compound is exposed to thesubstrate to form a tantalum-containing film on the substrate surface.The tantalum-containing compound adsorbs on the substrate surface,generally forming a monolayer thick film.

At step 408, another pulse of purge gas is administered into the processchamber. The purge gas assists in removing excess tantalum-containingcompound in the process chamber. During step 410, a pulse of anitrogen-containing compound or nitrogen precursor, such as ammonia, maybe introduced into the process chamber. The nitrogen-containing compoundreacts with the tantalum-containing layer to form a tantalum nitridelayer on the substrate surface. A carrier gas may also be used to helpdeliver the nitrogen-containing compound.

At step 412, the thickness of the tantalum nitride layer is determined.If the predetermined thickness is not achieved, then steps 404-410 aresequentially repeated in a cycle until the predetermined thickness isachieved. Once the predetermined thickness of the tantalum nitride layeris achieved, then process 400 is ceased at step 414. Process 400provides a tantalum nitride layer in a thickness from about 0.5 Å toabout 1.0 Å per cycle.

Although process 400 is illustrated by sequentially pulsing a purge gas,a tantalum-containing compound, the purge gas and a nitrogen-containingcompound, other combinations of order may be performed. The process maystart a cycle with either a tantalum-containing compound or anitrogen-containing compound. For example, a cycle may includesequentially pulsing a tantalum-containing compound, a purge gas, anitrogen-containing compound and the purge gas, or a cycle may includesequentially pulsing a nitrogen-containing compound, a purge gas, atantalum-containing compound and the purge gas.

Examples of tantalum-containing compounds, include, but are not limitedto precursors such as PDMAT, pentakis(ethylmethylamino) tantalum (PEMATor Ta[N(Et)Me]₅), pentakis(diethylamino)tantalum (PDEAT or Ta(NEt₂)₅,),tertiarybutylimino-tris(dimethylamino) tantalum (TBTDMT or(^(t)BuN)Ta(NMe₂)₃), tertiarybutylimino-tris(diethylamino) tantalum(TBTDET or (^(t)BuN)Ta(NEt₂)₃),tertiarybutylimino-tris(ethylmethylamino) tantalum (TBTEAT or(^(t)BuN)Ta[N(Et)Me]₃), tertiaryamylimino-tris(dimethylamino) tantalum(TAIMATA or (^(t)AmylN)Ta(NMe₂)₃, wherein ^(t)Amyl is the tertiaryamylgroup (C₅H₁₁— or CH₃CH₂C(CH₃)₂—), tertiaryamylimino-tris(diethylamino)tantalum (TAIEATA or (^(t)AmylN)Ta(NEt₂)₃,tertiaryamylimino-tris(ethylmethylamino) tantalum (TAIMATA or(^(t)AmylN)Ta([N(Et)Me]₃), tantalum halides, such as TaF₅ or TaCl₅,combinations thereof and/or derivatives thereof. Examples of nitrogencontaining-compounds include, but are not limited to precursors such asammonia (NH₃), hydrazine (N₂H₄), methylhydrazine (Me(H)NNH₂), dimethylhydrazine (Me₂NNH₂ or Me(H)NN(H)Me), tertiarybutylhydrazine(^(t)Bu(H)NNH₂), phenylhydrazine (C₆H₅(H)NNH₂), a nitrogen plasma source(e.g., N, N₂, N₂/H₂, NH₃, or a N₂H₄ plasma), 2,2′-azotertbutane(^(t)BuNN^(t)Bu), an azide source, such as ethyl azide (EtN₃),trimethylsilyl azide (Me₃SiN₃), derivatives thereof and combinationsthereof.

The tantalum nitride layer formation is described as starting with theadsorption of a monolayer of a tantalum-containing compound on thesubstrate followed by a monolayer of a nitrogen-containing compound.Alternatively, the tantalum nitride layer formation may start with theadsorption of a monolayer of a nitrogen-containing compound on thesubstrate followed by a monolayer of the tantalum-containing compound.Furthermore, in other embodiments, a pump evacuation alone betweenpulses of reactant gases may be used to prevent mixing of the reactantgases.

For processes 300 and 400, the time duration for each pulse of thetantalum-containing compound, the time duration for each pulse of thenitrogen-containing compound, and the duration of the purge gas betweenpulses of the reactants are variable and depend on the volume capacityof a deposition chamber employed as well as a vacuum system coupledthereto. For example, (1) a lower chamber pressure of a gas will requirea longer pulse time; (2) a lower gas flow rate will require a longertime for chamber pressure to rise and stabilize requiring a longer pulsetime; and (3) a large-volume chamber will take longer to fill, longerfor chamber pressure to stabilize thus requiring a longer pulse time.Similarly, time between each pulse is also variable and depends onvolume capacity of the process chamber as well as the vacuum systemcoupled thereto. In general, the time duration of a pulse of thetantalum-containing compound or the nitrogen-containing compound shouldbe long enough for adsorption of a monolayer of the compound. In oneaspect, a pulse of a tantalum-containing compound may still be in thechamber when a pulse of a nitrogen-containing compound enters. Ingeneral, the duration of the purge gas and/or pump evacuation should belong enough to prevent the pulses of the tantalum-containing compoundand the nitrogen-containing compound from mixing together in thereaction zone.

Generally, a pulse time of about 1.0 second or less for atantalum-containing compound and a pulse time of about 1.0 second orless for a nitrogen-containing compound are typically sufficient toabsorb alternating monolayers on a substrate structure. A time of about1.0 second or less between pulses of the tantalum-containing compoundand the nitrogen-containing compound is typically sufficient for thepurge gas, whether a continuous purge gas or a pulse of a purge gas, toprevent the pulses of the tantalum-containing compound and thenitrogen-containing compound from mixing together in the reaction zone.Of course, a longer pulse time of the reactants may be used to ensureabsorption of the tantalum-containing compound and thenitrogen-containing compound and a longer time between pulses of thereactants may be used to ensure removal of the reaction by-products.

An exemplary process of depositing a tantalum nitride layer by cyclicaldeposition comprises providing pulses of PDMAT at a flow rate betweenabout 20 sccm and about 1,000 sccm, preferably between about 100 sccmand about 400 sccm, for a pulse time of about 0.5 seconds or less, about0.1 seconds or less, or about 0.05 seconds or less. Pulses of ammoniamay be provided at a flow rate between about 20 sccm and about 1,000sccm, preferably between 200 sccm and about 600 sccm, for a pulse timeof about 0.5 seconds or less, about 0.1 seconds or less, or about 0.05seconds or less. An argon purge gas at a flow rate between about 100sccm and about 1,000 sccm, preferably, between about 100 sccm and about400 sccm, may be continuously provided. The time between pulses of thetantalum-containing compound and the nitrogen-containing compound may beabout 0.5 seconds or less, about 0.1 seconds or less, or about 0.07seconds or less. The heater temperature preferably is maintained betweenabout 100° C. and about 300° C. at a chamber pressure between about 1.0Torr and about 5.0 Torr.

Embodiments of cyclical deposition have been described above asadsorption of a monolayer of reactants on a substrate. The presentinvention also includes embodiments in which the reactants are depositedon a surface with a thickness more or less than a monolayer. The presentinvention also includes embodiments in which the reactants are notdeposited in a self-limiting manner. The present invention also includesembodiments in which deposition occurs in mainly a chemical vapordeposition process in which the reactants are delivered sequentially orsimultaneously. Embodiments of cyclical deposition have been describedabove as the deposition of a binary compound of tantalum nitrideutilizing pulses of two reactants. In the deposition of other elementsor compounds, pulses of two or more reactants may also be used.

Ruthenium Layer Formation

Process 100 further includes step 104, wherein ruthenium layer 208 isformed on barrier layer 206, as depicted in FIG. 2B. Ruthenium layer 208may be deposited on barrier layer 206 by ALD, CVD or PVD processes,preferably, by an ALD process. The barrier layer may be optionallyexposed to a pre-soak process prior to the deposition of ruthenium layer208. The pre-soak process may include exposing the substrate surface toa reductant, such as hydrogen, borane, diborane, alkyboranes (e.g.,ethylborane), silane, disilane, trisilane, alkyl silanes (e.g.,methylsilane), halosilanes (e.g., dichlorosilane), derivatives thereofand combinations thereof.

In one example, ruthenium layer 208 is deposited using an ALD or acyclical deposition process that includes alternately adsorbing aruthenium-containing precursor and a reducing gas containing a reductanton a substrate structure. The ruthenium-containing precursor and thereducing gas undergo a reaction to form ruthenium layer 208 on barrierlayer 206. Ruthenium layer 208 may be deposited with a thickness lessthan about 1,000 Å, preferably less than about 500 Å and more preferablyin a range from about 10 Å to about 100 Å, for example, about 30 Å. Inanother example, instead of a ruthenium layer, a noble-metal layer maybe deposited on barrier layer 206, such as palladium, platinum, cobalt,nickel, rhodium, and combinations thereof. A further description ofcyclic layer deposition of ruthenium and other noble metals is disclosedin commonly assigned U.S. Ser. No. 10/811,230, filed Mar. 26, 2004, andpublished as US 2004-0241321, and U.S. Ser. No. 10/634,662, filed Aug.4, 2003, and issued as U.S. Pat. No. 7,404,985, and U.S. Ser. No.10/443,648, filed May 22, 2003, and issued as U.S. Pat. No. 7,264,846,which are each herein incorporated by reference.

FIG. 5 illustrates process 500 detailing the various steps used for thedeposition of ruthenium layer 208 during one embodiment of an ALDprocess. As shown in step 502, a substrate is provided to the processchamber. The process chamber conditions, such as the temperature andpressure, are adjusted to enhance the adsorption of the process gases onthe substrate so as to facilitate the reaction of theruthenium-containing precursor and the reductant.

For ruthenium layer deposition, the substrate may be maintained at atemperature less than about 800° C., preferably in a range from about200° C. to about 600° C. The process chamber pressure is maintained in arange from about 0.1 Torr to about 80 Torr, preferably from about 1 Torrto about 10 Torr. The ruthenium-containing precursor may be provided ata flow rate in a range from about 0.01 sccm to about 20 sccm, preferablyfrom about 0.1 sccm to about 5 sccm, and more preferably between about0.1 sccm to about 1 sccm. The reducing gas may be provided at a flowrate in a range from about 1 sccm to about 2,000 sccm, preferablybetween about 20 sccm to about 300 sccm, for example, about 200 sccm.

During process 500, a constant carrier gas flow is established withinthe process chamber and exposed to the substrate, as illustrated in step504. Carrier gases may be selected so as to also act as a purge gas forthe removal of volatile reactants and/or by-products from the processchamber. Carrier or purge gases such as, for example, helium, argon,nitrogen, hydrogen, forming gas and combinations thereof. The carriergas may be provided at a flow rate in a range from about 500 sccm toabout 5,000 sccm, preferably from about 500 sccm to about 2,500 sccm for200 mm substrates and from about 1,000 sccm to about 5,000 sccm for 300mm substrates.

Referring to step 506, after the carrier gas stream is establishedwithin the process chamber, a pulse of a ruthenium-containing precursor(e.g., ruthenocene or bis(2,4-dimethylpentadienyl)ruthenium) is added tothe carrier gas stream. The pulse of the ruthenium-containing precursorlasts for a predetermined time interval, such as a range from about 0.01second to about 10 seconds, preferably from about 0.05 second to about 4seconds, for example, about 2 seconds.

Ruthenium-containing precursors may include ruthenocene compounds andruthenium compounds containing at least one open chain dienyl ligand.Ruthenocene compounds contain at least one cyclopentyl ligand such asR_(x)C₅H_(5-x), where x=0-5 and R is independently hydrogen or an alkylgroup and include bis(cyclopentadienyl)ruthenium compounds,bis(alkylcyclopentadienyl)ruthenium compounds,bis(dialkylcyclopentadienyl)ruthenium compounds and derivatives thereof,where the alkyl groups may be independently methyl, ethyl, propyl orbutyl. A bis(cyclopentadienyl)ruthenium compound has a generic chemicalformula (R_(x)C₅H_(5-x))₂Ru, where x=0-5 and R is independently hydrogenor an alkyl group such as methyl, ethyl, propyl or butyl.

Ruthenium compounds containing at least one open chain dienyl ligand maycontain a ligand such as CH₂CRCHCRCH₂, where R is independently an alkylgroup or hydrogen. In some examples, the ruthenium-containing precursormay have two open-chain dienyl ligands, such as pentadienyl orheptadienyl and include bis(pentadienyl)ruthenium compounds,bis(alkylpentadienyl)ruthenium compounds andbis(dialkylpentadienyl)ruthenium compounds. A bis(pentadienyl)rutheniumcompound has a generic chemical formula (CH₂CRCHCRCH₂)₂Ru, where R isindependently an alkyl group or hydrogen. Usually, R is independentlyhydrogen, methyl, ethyl, propyl or butyl. Also, ruthenium-containingprecursor may have both an one open-chain dienyl ligand and acyclopentadienyl ligand.

Therefore, examples of ruthenium-containing precursors useful during thedeposition process described herein includebis(cyclopentadienyl)ruthenium (Cp₂Ru),bis(methylcyclopentadienyl)ruthenium,bis(ethylcyclopentadienyl)ruthenium,bis(pentamethylcyclopentadienyl)ruthenium,bis(2,4-dimethylpentadienyl)ruthenium,bis(2,4-diethylpentadienyl)ruthenium, bis(2,4-diisopropylpentadienyl)ruthenium, bis(2,4-ditertbutylpentadienyl)ruthenium,bis(methylpentadienyl)ruthenium, bis(ethylpentadienyl)ruthenium,bis(isopropylpentadienyl)ruthenium, bis(tertbutylpentadienyl)ruthenium,derivatives thereof, and combinations thereof. In some embodiments,other ruthenium-containing compounds includetris(2,2,6,6-tetramethyl-3,5-heptanedionato) ruthenium, dicarbonylpentadienyl ruthenium, ruthenium acetyl acetonate,(2,4-dimethylpentadienyl)ruthenium (cyclopentadienyl),bis(2,2,6,6-tetramethyl-3,5-heptanedionato) ruthenium(1,5-cyclooctadiene),(2,4-dimethylpentadienyl)ruthenium(methylcyclopentadienyl),(1,5-cyclooctadiene)ruthenium (cyclopentadienyl),(1,5-cyclooctadiene)ruthenium(methylcyclopentadienyl),(1,5-cyclooctadiene)ruthenium (ethylcyclopentadienyl),(2,4-dimethylpentadienyl)ruthenium(ethylcyclopentadienyl),(2,4-dimethylpentadienyl)ruthenium (isopropylcyclopentadienyl),bis(N,N-dimethyl 1,3-tetramethyl diiminato) ruthenium(1,5-cyclooctadiene), bis(N,N-dimethyl 1,3-dimethyl diiminato) ruthenium(1,5-cyclooctadiene), bis(allyl) ruthenium (1,5-cyclooctadiene),(η⁶-C₆H₆) ruthenium (1,3-cyclohexadiene),bis(1,1-dimethyl-2-aminoethoxylato)ruthenium (1,5-cyclooctadiene),bis(1,1-dimethyl-2-aminoethylaminato)ruthenium (1,5-cyclooctadiene),derivatives thereof, and combinations thereof.

Other noble metal-containing compounds may be used as a substitute forruthenium-containing precursors to deposit their respective noble metallayer, such as precursors containing palladium, platinum, cobalt, nickeland rhodium. Palladium-containing precursors, for example, bis(allyl)palladium, bis(2-methylallyl)palladium, and (cyclopentadienyl) (allyl)palladium, derivatives thereof and combinations thereof. Suitableplatinum-containing precursors include dimethyl(cyclooctadiene)platinum,trimethyl(cyclopentadienyl)platinum,trimethyl(methylcyclopentadienyl)platinum,cyclopentadienyl(allyl)platinum, methyl(carbonyl)cyclopentadienylplatinum, trimethyl(acetylacetonato)platinum,bis(acetylacetonato)platinum, derivatives thereof and combinationsthereof. Suitable cobalt-containing precursors includebis(cyclopentadienyl)cobalt, (cyclopentadienyl) (cyclohexadienyl)cobalt,cyclopentadienyl (1,3-hexadienyl)cobalt,(cyclobutadienyl)(cyclopentadienyl)cobalt,bis(methylcyclopentadienyl)cobalt, (cyclopentadienyl)(5-methylcyclopentadienyl)cobalt,bis(ethylene)(pentamethylcyclopentadienyl)cobalt, derivatives thereofand combinations thereof. A suitable nickel-containing precursorincludes bis(methylcyclopentadienyl) nickel and suitablerhodium-containing precursors includebis(carbonyl)(cyclopentadienyl)rhodium,bis(carbonyl)(ethylcyclopentadienyl)rhodium,bis(carbonyl)(methylcyclopentadienyl)rhodium, bis(propylene)rhodium,derivatives thereof, and combinations thereof.

The time interval for the pulse of the ruthenium-containing precursor isvariable depending upon a number of factors such as, for example, thevolume capacity of the process chamber employed, the vacuum systemcoupled thereto and the volatility/reactivity of the reactants used. Forexample, (1) a large-volume process chamber may lead to a longer time tostabilize the process conditions such as, for example, carrier/purge gasflow and temperature, requiring a longer pulse time; (2) a lower flowrate for the process gas may also lead to a longer time to stabilize theprocess conditions requiring a longer pulse time; and (3) a lowerchamber pressure means that the process gas is evacuated from theprocess chamber more quickly requiring a longer pulse time. In general,the process conditions are advantageously selected so that a pulse ofthe ruthenium-containing precursor provides a sufficient amount ofprecursor so that at least a monolayer of the ruthenium-containingprecursor is adsorbed on the substrate. Thereafter, excessruthenium-containing precursor remaining in the chamber may be removedfrom the process chamber by the constant carrier gas stream incombination with the vacuum system.

In step 508, after the excess ruthenium-containing precursor has beenflushed from the process chamber by the carrier gas stream, a pulse of areducing gas or reductant is added to the carrier gas stream. A reducinggas may include a reductant and another gas, such as a carrier gas. Thepulse of the reducing gas also lasts for a predetermined time interval.In general, the time interval for the pulse of the reducing gas shouldbe long enough for adsorption of at least a monolayer of the reducinggas on the ruthenium-containing compound. The pulse of reducing gaslasts for a predetermined time interval, such as a range from about 0.01second to about 10 seconds, preferably from about 0.1 second to about 2seconds and more preferably from about 0.1 second to about 1 second.Thereafter, excess reducing gas is flushed from the process chamber bythe carrier gas stream.

Suitable reducing gases may include traditional reductants, for example,hydrogen (e.g., H₂ or atomic-H), ammonia (NH₃), silane (SiH₄), disilane(Si₂H₆), trisilane (Si₃H₈), tetrasilane (Si₄H₁₀), dimethylsilane(SiC₂H₈), methyl silane (SiCH₆), ethylsilane (SiC₂H₈), chlorosilane(ClSiH₃), dichlorosilane (Cl₂SiH₂), hexachlorodisilane (Si₂Cl₆), borane(BH₃), diborane (B₂H₆), triborane, tetraborane, pentaborane,alkylboranes, such as triethylborane (Et₃B), derivatives thereof andcombinations thereof.

Also, the reducing gas may include oxygen-containing gases used as areductant, such as oxygen (e.g., O₂), nitrous oxide (N₂O), nitric oxide(NO), nitrogen dioxide (NO₂), derivatives thereof and combinationsthereof. Furthermore, the traditional reductants may be combined withthe oxygen-containing reductants to form a reducing gas.Oxygen-containing gases that are used in embodiments of the presentinvention are traditionally used in the chemical art as an oxidant.However, ligands on an organometallic compound containing a noble metal(e.g., Ru) are usually more susceptible to the oxygen-containingreductants than the noble metal. Therefore, the ligand is generallyoxidized from the metal center while the metal ion is reduced to formthe elemental metal. In one example, the reducing gas is air containingambient oxygen as the reductant. The air may be dried over sieves toreduce ambient water.

Process 500, including steps 504 through 508, comprise one embodiment ofa deposition cycle for a ruthenium layer. A constant flow of carrier gasis provided to the process chamber modulated by alternating periods ofpulsing and non-pulsing where the periods of pulsing alternate betweenthe ruthenium-containing precursor and the reducing gas along with thecarrier gas stream, while the periods of non-pulsing include only thecarrier gas stream.

The time interval for each of the pulses of the ruthenium-containingprecursor and the reducing gas may have the same duration. That is, theduration of the pulse of the ruthenium-containing precursor may beidentical to the duration of the pulse of the reducing gas. For such anembodiment, a time interval (T₁) for the pulse of theruthenium-containing precursor is equal to a time interval (T₂) for thepulse of the reducing gas.

Alternatively, the time interval for each of the pulses of theruthenium-containing precursor and the reducing gas may have differentdurations. That is, the duration of the pulse of theruthenium-containing precursor may be shorter or longer than theduration of the pulse of the reducing gas. For such an embodiment, atime interval (T₁) for the pulse of the ruthenium-containing precursoris different than the time interval (T₂) for the pulse of the reducinggas.

In addition, the periods of non-pulsing between each of the pulses ofthe ruthenium-containing precursor and the reducing gas may have thesame duration. That is, the duration of the period of non-pulsingbetween each pulse of the ruthenium-containing precursor and each pulseof the reducing gas is identical. For such an embodiment, a timeinterval (T₃) of non-pulsing between the pulse of theruthenium-containing precursor and the pulse of the reducing gas isequal to a time interval (T₄) of non-pulsing between the pulse of thereducing gas and the pulse of the ruthenium-containing precursor. Duringthe time periods of non-pulsing only the constant carrier gas stream isprovided to the process chamber.

Alternatively, the periods of non-pulsing between each of the pulses ofthe ruthenium-containing precursor and the reducing gas may havedifferent duration. That is, the duration of the period of non-pulsingbetween each pulse of the ruthenium-containing precursor and each pulseof the reducing gas may be shorter or longer than the duration of theperiod of non-pulsing between each pulse of the reducing gas and theruthenium-containing precursor. For such an embodiment, a time interval(T₃) of non-pulsing between the pulse of the ruthenium-containingprecursor and the pulse of the reducing gas is different from a timeinterval (T₄) of non-pulsing between the pulse of the reducing gas andthe pulse of ruthenium-containing precursor. During the time periods ofnon-pulsing only the constant carrier gas stream is provided to theprocess chamber.

Additionally, the time intervals for each pulse of theruthenium-containing precursor, the reducing gas and the periods ofnon-pulsing therebetween for each deposition cycle may have the sameduration. For such an embodiment, a time interval (T₁) for theruthenium-containing precursor, a time interval (T₂) for the reducinggas, a time interval (T₃) of non-pulsing between the pulse of theruthenium-containing precursor and the pulse of the reducing gas and atime interval (T₄) of non-pulsing between the pulse of the reducing gasand the pulse of the ruthenium-containing precursor each have the samevalue for each deposition cycle. For example, in a first depositioncycle (C₁), a time interval (T₁) for the pulse of theruthenium-containing precursor has the same duration as the timeinterval (T₁) for the pulse of the ruthenium-containing precursor insubsequent deposition cycles (C₂ . . . C_(n)). Similarly, the durationof each pulse of the reducing gas and the periods of non-pulsing betweenthe pulse of the ruthenium-containing precursor and the reducing gas inthe first deposition cycle (C₁) is the same as the duration of eachpulse of the reducing gas and the periods of non-pulsing between thepulse of the ruthenium-containing precursor and the reducing gas insubsequent deposition cycles (C₂ . . . C_(n)), respectively.

Alternatively, the time intervals for at least one pulse of theruthenium-containing precursor, the reducing gas and the periods ofnon-pulsing therebetween for one or more of the deposition cycles of theruthenium layer deposition process may have different durations. Forsuch an embodiment, one or more of the time intervals (T₁) for thepulses of the ruthenium-containing precursor, the time intervals (T₂)for the pulses of the reducing gas, the time intervals (T₃) ofnon-pulsing between the pulse of the ruthenium-containing precursor andthe reducing gas and the time intervals (T₄) of non-pulsing between thepulses of the reducing gas and the ruthenium-containing precursor mayhave different values for one or more deposition cycles of the cyclicaldeposition process. For example, in a first deposition cycle (C₁), thetime interval (T₁) for the pulse of the ruthenium-containing precursormay be longer or shorter than one or more time interval (T₁) for thepulse of the ruthenium-containing precursor in subsequent depositioncycles (C₂ . . . C_(n)). Similarly, the durations of the pulses of thereducing gas and the periods of non-pulsing between the pulse of theruthenium-containing precursor and the reducing gas in the firstdeposition cycle (C₁) may be the same or different than the duration ofeach pulse of the reducing gas and the periods of non-pulsing betweenthe pulse of the ruthenium-containing precursor and the reducing gas insubsequent deposition cycles (C₂ . . . C_(n)).

Referring to step 510, after each deposition cycle (steps 504 through508) a thickness of the ruthenium layer will be formed on the substrate.Depending on specific device requirements, subsequent deposition cyclesmay be needed to achieve a desired thickness. As such, steps 504 through508 are repeated until the desired thickness for the ruthenium layer isachieved. Thereafter, when the desired thickness for the ruthenium layeris achieved the process is stopped as indicated by step 512.

In an alternate process sequence described with respect to FIG. 6, theruthenium layer deposition cycle comprises separate pulses for each ofthe ruthenium-containing precursor, the reductant and a purge gas. Forsuch an embodiment, the ruthenium layer deposition sequence 600 includesproviding a substrate to the process chamber and adjusting the processconditions (step 602), providing a first pulse of a purge gas to theprocess chamber (step 604), providing a pulse of a ruthenium-containingprecursor to the process chamber (step 606), providing a second pulse ofthe purge gas to the process chamber (step 608), providing a pulse of areducing gas to the process chamber (step 610), and then repeating steps604 through 610, or stopping the deposition process (step 614) dependingon whether a desired thickness for the ruthenium layer has been achieved(step 612).

In another embodiment, a purge gas may be provided in pulsessequentially between each pulse of the ruthenium-containing precursorand reducing gas, as depicted by process 600 in FIG. 6. During step 602,the chamber conditions are adjusted, such as temperature and pressure.During a deposition process, the substrate may be maintainedapproximately below a thermal decomposition temperature of a selectedruthenium-containing precursor. An exemplary heater temperature range tobe used with ruthenium-containing precursors identified herein maintainsthe substrate at a temperature less than about 800° C., preferably lessthan about 600° C., and more preferably, about 400° C. or less. Thechamber pressure is maintained at about 80 Torr or less, preferably in arange from about 1 Torr to about 10 Torr.

During step 604, a first pulse purge gas is administered into theprocess chamber. The purge gas may be the same or different gas used asa carrier gas. Generally, the purge gas may include nitrogen, argon,hydrogen, helium, forming gas or combinations thereof. At step 606, apulse of ruthenium-containing precursor, such as ruthenocene orbis(2,4-dimethylpentadienyl)ruthenium, is introduced into the processchamber. The ruthenium-containing precursor may be provided with the aidof a carrier gas or purge gas independent from the stream of carriergas. The ruthenium-containing precursor is exposed to the substrate toform a ruthenium-containing film on the substrate surface. Theruthenium-containing precursor adsorbs on the substrate surface,generally forming a monolayer thick film.

At step 608, another pulse of purge gas is administered into the processchamber. The purge gas assists in removing excess ruthenium-containingprecursor in the process chamber. During step 610, a pulse of a reducinggas or reductant, such as diborane, silane or oxygen gas, may beintroduced into the process chamber. The reducing gas reacts with theruthenium-containing layer to form a ruthenium layer on the substratesurface, such as the barrier layer. A carrier gas may also be used tohelp deliver the reductant.

At step 612, the thickness of the ruthenium layer is determined. If thepredetermined thickness is not achieved, then steps 604-610 aresequentially repeated in a cycle until the predetermined thickness isachieved. Once the predetermined thickness of the ruthenium layer isachieved, then process 600 is ceased at step 614. Process 600 may form aruthenium layer at a rate in a range from about 0.5 Å to about 1.0 Å percycle.

Although process 600 is illustrated by sequentially pulsing a purge gas,a ruthenium-containing precursor, the purge gas and a reducing gas,other combinations of order may be performed. The process may start acycle with either a ruthenium-containing precursor or a reducing gas.For example, a cycle may include sequentially pulsing aruthenium-containing precursor, a purge gas, a reducing gas and thepurge gas, or a cycle may include sequentially pulsing a reducing gas, apurge gas, a ruthenium-containing precursor and the purge gas.

The time intervals for each of the pulses of the ruthenium-containingprecursor, the reducing gas and the purge gas may have the same ordifferent durations as discussed above with respect to FIG. 5.Alternatively, corresponding time intervals for one or more pulses ofthe ruthenium-containing precursor, the reducing gas and the purge gasin one or more of the deposition cycles of the ruthenium layerdeposition process may have different durations.

In FIGS. 5-6, the ruthenium layer deposition cycle is depicted asbeginning with a pulse of the ruthenium-containing precursor followed bya pulse of the reducing gas. Alternatively, the ruthenium layerdeposition cycle may start with a pulse of the reducing gas followed bya pulse of the ruthenium-containing precursor.

One exemplary process of depositing a ruthenium layer by an ALD processto a barrier layer in the process chamber 780 of FIG. 8 includesproviding pulses of a ruthenium-containing precursor, such asbis(cyclopentadienyl)ruthenium (Cp₂Ru), from gas source 838 at a flowrate between about 0.01 sccm and about 5 sccm, preferably between about0.1 sccm and about 1 sccm, through valve 842A for a pulse time of about4 seconds or less, preferably about 1.5 seconds or less, such as about0.1 second or less, and as low as about 0.05 second or less due to asmall volume of the reaction zone 864. Pulses of a reducing gas, such asdiborane, may be provided from gas source 839 at a flow rate betweenabout 1 sccm and about 1,000 sccm, preferably between 10 sccm and about500 sccm, more preferably from about 100 sccm to about 300 sccm throughvalve 842B for a pulse time of about 2 seconds or less, about 1 secondor less, or about 0.1 second or less due to a smaller volume of thereaction zone 864. An argon purge gas at a flow rate between about 500sccm and about 5,000 sccm, preferably, between about 1,500 sccm andabout 3,500 sccm, may be continuously provided or pulsed from gas source840 through valves 842A, 842B. The time between pulses of Cp₂Ru anddiborane may be about 0.5 second or less, such as about 0.1 second orless, and as low as about 0.07 second or less due to the smaller volumeof the reaction zone 864. It is believed to fill a reaction zone with areactant gas and/or purge gas, pulse times as low as about 0.016 secondare sufficient, with correspondingly shorter pulse times for a reactionzone 864 sized for smaller wafers (e.g., 200 mm). The heater temperatureis maintained in a range from about 100° C. to about 800° C., preferablyfrom about 200° C. to about 600° C. The chamber pressure is maintainedin a range from about 0.1 Torr to about 20 Torr, preferably from about1.0 Torr to about 10 Torr, for example, about 1.5 Torr. This processforms a ruthenium layer at a rate in a range from about 0.1 Å to about1.0 Å per ALD cycle. The alternating sequence may be repeated until adesired thickness is achieved.

The ruthenium layer is deposited to a sidewall coverage with a thicknessof about 1,000 Å or less, generally in a range from about 1 Å to about500 Å. In one example, the ruthenium layer is deposited to a sidewallcoverage with a thickness of about 50 Å or less, preferably about 20 Åor less, and more preferably about 10 Å or less. A ruthenium layer witha thickness of about 10 Å or less is believed to be a sufficientthickness in the application as an underlayer to adhere tungstendeposition (i.e., tungsten nucleation layer) and prevent peeling oftungsten layers.

Embodiments of the invention include improved methodologies overcomingdisadvantages of the prior art, and preferred precursors and chemistriesproviding additional advantages, such as higher conductance fordeposited ruthenium layers and strong adhesion properties. Rutheniumlayers may be formed with a sheet resistance less than about 2,000 Ω/sq,preferably less than about 1,000 Ω/sq, and more preferably less thanabout 500 Ω/sq. For example, ALD processes conducted at a temperaturewithin the range from about 300° C. to about 350° C. form rutheniumlayers with a sheet resistance measuring from about 25 Ω/sq to about 250Ω/sq. In another example, a ruthenium layer with a thickness of about100 Å may have a resistivity less than 15 μΩ-cm.

Tungsten Nucleation Layer Formation

Process 100 further includes step 106 to expose the ruthenium layer 208to a pre-soak process and step 108 to form a tungsten nucleation layer210 on the ruthenium layer 208, as depicted in FIG. 2C. The tungstennucleation layer 210 is deposited by using conventional depositiontechniques, such as ALD, CVD or PVD. Preferably, tungsten nucleationlayer 210 is deposited by an ALD process, such as alternately adsorbinga tungsten-containing precursor and a reducing compound. Tungstennucleation layer 210 generally has a thickness ranging from about 10 Åto about 200 Å.

FIG. 7 illustrates an exemplary process sequence 700 for forming animproved tungsten nucleation layer 210 according to one embodiment ofthe invention. A substrate, containing the exposed ruthenium layer, isfirst loaded into a process chamber capable of performing cyclicaldeposition and the process conditions are adjusted (step 710). Thesubstrate is exposed to a soak process lasting in a range from about 5seconds to about 90 seconds (step 720). A pulse of a tungsten-containingcompound accompanied with a suitable carrier gas is introduced into theprocessing chamber (step 730). A pulse of purge gas is provided into theprocessing chamber (step 740) to purge or otherwise remove any residualtungsten-containing compound or by-products. Next, a pulse of a reducingcompound accompanied with a suitable carrier gas is introduced into theprocessing chamber (step 750). The reducing compound may be the samecompound as the gas used for the soak step (step 720) or alternatively,the reducing gas may be a different compound, depending on the productthroughput requirements and the device applications. A pulse of gas isthen introduced into the processing chamber (step 760) to purge orotherwise remove any residual reducing compound and/or by-products.

Embodiments of the invention provide an improved process for depositingtungsten films. The preferred process includes the pre-soak process atstep 106 prior to tungsten nucleation layer 210 deposition to activatethe underlying ruthenium layer 208. The pre-soak process includesexposing the substrate surface to a gas containing at least onereductant, such as hydrogen, borane, diborane, alkyboranes (e.g.,ethylborane), silane, disilane, trisilane, alkyl silanes (e.g.,methylsilane), halosilanes (e.g., dichlorosilane), derivatives thereofand combinations thereof. Preferably, the ruthenium layer 208 is exposedto diborane and/or silane. In general, the soak occurs in-situ in arange from about 5 seconds to about 90 seconds at similar processingconditions as a subsequent tungsten cyclical deposition process, therebysignificantly increasing production throughput. Further description of asoak process and subsequent cyclic deposition process for tungsten aredisclosed in commonly assigned U.S. patent application Ser. No.10/418,728, filed Apr. 18, 2003, entitled, “Methods for DepositingTungsten Layers Employing Atomic Layer Deposition Techniques,” and isherein incorporated by reference. Suitable carrier gases or purge gasesinclude helium, argon, nitrogen, hydrogen, forming gas and combinationsthereof. Typically, the borane compounds utilize argon or nitrogen as acarrier gas and the silane compounds use hydrogen, argon or nitrogen asthe carrier gas.

The substrate surface is exposed to a soak process at a temperature inthe range from about 100° C. to about 600° C., preferably from about100° C. to about 400° C., more preferably from about 300° C. to about350° C. The soak process (step 720) is typically performed at a pressurein the range from about 1 Torr to about 150 Torr, preferably from about5 Torr to about 90 Torr. In some examples, the pressure is in a rangefrom about 5 Torr to about 20 Torr. In another example, the pressure isabout 40 Torr. The soak is usually conducted to the substrate surfaceand exposed ruthenium layer for a period of time in the range from about5 seconds to about 90 seconds. In one aspect, the soak will last forabout 60 seconds or less. In another aspect, the soak will last forabout 30 seconds or less. In another aspect, the soak will last forabout 10 seconds. The soak process includes a soak compound and usuallyhas a carrier gas. The flow rate of the soak compound is generally inthe range from about 10 sccm to about 2,000 sccm, preferably from about50 sccm to about 500 sccm. The flow rate of the carrier gas is generallyin the range from about 10 sccm to about 2,000 sccm, preferably fromabout 50 sccm to about 500 sccm.

A soak process is administered to a substrate surface containing theexposed ruthenium layer 208. In one example, the soak process containssilane with a flow rate in the range from about 25 sccm to about 500sccm and hydrogen with a flow rate in the range from about 200 sccm toabout 700 sccm. The soak is conducted at a temperature in the range fromabout 100° C. to about 400° C., preferably about 300° C., a pressure inthe range from about 1 Torr to about 120 Torr, preferably from about 30Torr to about 120 Torr and for a period of time from about 5 seconds toabout 90 seconds. In another example, the soak process contains diboranewith a flow rate in the range from about 25 sccm to about 500 sccm andhydrogen and/or argon with a flow rate in the range from about 200 sccmto about 700 sccm. The soak is conducted at a temperature in the rangefrom about 100° C. to about 400° C., preferably about 300° C., apressure in the range from about 1 Torr to about 120 Torr, preferablyfrom about 1 Torr to about 50 Torr, and for a period of time from about5 seconds to about 90 seconds, preferably less than about 60 seconds.

The cyclical deposition process or ALD process of FIG. 7 typicallyoccurs at a pressure in the range from about 1 Torr to about 150 Torr,preferably from about 5 Torr to about 90 Torr. In some examples, apressure is in a range from about 5 Torr to about 20 Torr. In anotherexample, the pressure is about 40 Torr. The temperature of the substratecan be as low as ambient temperature, about 20° C. However, thetemperature is usually in the range from about 100° C. to about 600° C.,preferably from about 100° C. to about 400° C., more preferably fromabout 300° C. to about 350° C. The temperature and pressure during thesoak process may be independently maintained for the subsequent ALDprocess.

In step 730, the tungsten-containing compound is preferably tungstenhexafluoride and introduced at a rate in the range from about 5 sccm toabout 200 sccm. The tungsten-containing compound can be introduced witha carrier gas, such as argon with a flow rate in the range from about 50sccm to about 1,000 sccm. In step 750, the reducing compound ispreferably diborane or silane and introduced at a rate in the range fromabout 5 sccm to about 2,000 sccm, preferably from about 50 sccm to about500 sccm. The reducing compound can be introduced with a carrier gas,such as hydrogen, with a flow rate in the range from about 50 sccm toabout 2,000 sccm. The pulses of a purge gas, preferably argon ornitrogen, at steps 740 and 760, are typically introduced at a rate fromabout 50 sccm to about 2,000 sccm, preferably about 500 sccm. Eachprocessing step (steps 730 through 760) lasts from about 0.01 seconds toabout 10 seconds, preferably from about 0.1 seconds to about 1 second.Longer processing steps, such as about 30 seconds or about 60 seconds,achieve tungsten deposition. However, the throughput is reduced. Thespecific pressures and times are obtained through experimentation. Inone example, a 300 mm diameter wafer needs about twice the flow rate asa 200 mm diameter wafer in order to maintain similar throughput.

Referring to step 770, after each deposition cycle (steps 730 through760), a tungsten nucleation layer 210 having a particular thickness willbe deposited on the substrate surface. Usually, each deposition cycleforms a layer with a thickness in the range from about 1 Å to about 10Å. Depending on specific device requirements, subsequent depositioncycles may be needed to deposit tungsten nucleation layer 210 having adesired thickness. As such, a deposition cycle (steps 730 through 760)can be repeated until the desired thickness for the tungsten nucleationlayer 210 is achieved. The tungsten nucleation layer 210 is typicallydeposited to a thickness in the range from about 10 Å to about 200 Å,preferably from about 20 Å to about 100 Å. Thereafter, the process isstopped as indicated by step 780 when the desired thickness is achieved.

Suitable tungsten-containing compounds include tungsten hexafluoride(WF₆), tungsten hexachloride (WCl₆), tungsten hexacarbonyl (W(CO)₆),bis(cyclopentadienyl)tungsten dichloride (Cp₂WCl₂) and mesitylenetungsten tricarbonyl (C₉H₁₂W(CO)₃), as well as derivatives thereof.Suitable reducing compounds include silane compounds, borane compoundsand hydrogen. Silane compounds include silane, disilane, trisilane,tetrasilane, chlorosilane, dichlorosilane, tetrachlorosilane,hexachlorodisilane, methylsilanes and other alkylsilanes and derivativesthereof, while borane compounds include borane, diborane, triborane,tetraborane, pentaborane, triethylborane and other alkylboranes andderivatives thereof. Preferred reducing compounds and soak compoundsinclude silane, disilane, diborane, hydrogen and combinations thereof.

In FIG. 2C, tungsten nucleation layer 210 is then cyclically depositedon the ruthenium layer 208 following treatment of the substrate surfacewith a soak process. In one example, tungsten nucleation layer 210 iscyclically deposited using alternating pulses of tungsten hexafluorideand diborane. The tungsten hexafluoride is pulsed at a rate in a rangefrom about 1 sccm to about 100 sccm, preferably from about 5 sccm toabout 50 sccm for about 0.3 second. A carrier gas, such as argon, isprovided along with the tungsten hexafluoride at a rate in a range fromabout 100 sccm to about 1,000 sccm, preferably from about 100 sccm toabout 500 sccm. The diborane is pulsed at a rate in a range from about50 sccm to about 1,000 sccm, preferably from about 400 sccm to about 600sccm for about 0.3 second. A carrier gas, such as hydrogen, is providedalong with the diborane at a rate in a range from about 50 sccm to about500 sccm, preferably from about 100 sccm to about 300 sccm. Thesubstrate is maintained at a temperature in a range from about 100° C.to about 400° C., preferably about 300° C., a chamber pressure in arange from about 1 Torr to about 120 Torr, preferably in a range fromabout 1 Torr to about 50 Torr. After each pulse of the tungstenhexafluoride and the diborane, argon is pulsed for about 0.5 second topurge or otherwise remove any reactive compounds from the processingchamber.

In another example, tungsten nucleation layer 210 is cyclicallydeposited on ruthenium layer 208 using alternating pulses of tungstenhexafluoride and silane. The tungsten hexafluoride is pulsed asdescribed above with argon for about 0.5 seconds. The silane is pulsedat a rate in a range from about 1 sccm to about 100 sccm, preferablyfrom about 5 sccm to about 50 sccm for about 0.5 second. A carrier gas,such as hydrogen, is provided along with the silane at a rate in a rangefrom about 100 sccm to about 1,000 sccm, preferably from about 100 sccmto about 500 sccm. The substrate is maintained at a temperature in arange from about 100° C. to about 400° C., preferably about 300° C., achamber pressure in a range from about 1 Torr to about 30 Torr,preferably in a range from about 5 Torr to about 20 Torr. After eachpulse of the tungsten hexafluoride and the silane, argon is pulsed forabout 0.5 second to purge or otherwise remove any reactive compoundsfrom the processing chamber.

Tungsten nucleation layer formed by alternating pulses of tungstenhexafluoride and a reducing compound with a soak treatment hasadvantages over a nucleation layer formed by alternating pulses oftungsten hexafluoride and the same reducing compound without the priorsoak. The tungsten nucleation layer shows less stress for the integratedfilm, as well as, less fluorine content at the interface of thenucleation layer (when WF₆ is used). Also, the nucleation layerdeposited post a soak treatment has higher uniformity coverage and isdeposited quicker due to a reduced incubation period. Fewer volcanoesappear on the surface of the tungsten film deposited utilizing a soak,as compared to tungsten films deposited without exploiting a soak afterpost tungsten bulk-fill deposition.

Tungsten Bulk Layer Formation

A soak process may be optionally administered to a substrate surfacecontaining the tungsten nucleation layer 210. The soak process has beenfound to increase adhesion at the interface between the tungstennucleation layer 210 and the tungsten bulk layer 212, as well as reduceelectrical resistivity at the interface. The soak process usuallyincludes a reductant, such as a silane compound or a borane compound,along with at least one carrier gas. Examples of reductants useful in asoak process include hydrogen, borane, diborane, alkyboranes (e.g.,ethylborane), silane, disilane, trisilane, alkyl silanes (e.g.,methylsilane), halosilanes (e.g., dichlorosilane), derivatives thereofand combinations thereof. Preferred reductants include silane anddiborane while a preferred carrier gas is either hydrogen and/or argon.

In one example of a soak process, the substrate is exposed to a soak gascontaining silane with a flow rate in the range from about 25 sccm toabout 500 sccm and hydrogen with a flow rate in the range from about 200sccm to about 700 sccm. The soak process is conducted at a temperaturein the range from about 100° C. to about 400° C., preferably about 300°C., a pressure in the range from about 1 Torr to about 120 Torr,preferably about 30 Torr to about 120 Torr and for a period of time fromabout 5 seconds to about 90 seconds. In another example of a soakprocess, the substrate is exposed to a soak gas containing diborane witha flow rate in the range from about 25 sccm to about 500 sccm andhydrogen and/or argon with a flow rate in the range from about 200 sccmto about 700 sccm. The soak process is conducted at a temperature in therange from about 100° C. to about 400° C., preferably about 300° C., apressure in the range from about 1 Torr to about 120 Torr, preferablyabout 1 Torr to about 50 Torr, and for a period of time from about 5seconds to about 90 seconds, preferably less than about 60 seconds.

Process 100, of FIG. 1, further includes step 110, wherein a tungstenbulk layer 212 is formed on the tungsten nucleation layer 210, asdepicted in FIG. 2D. Although any metal deposition process, such asconventional CVD or PVD, may be used, the tungsten bulk layer 212 mayalso be deposited by alternately adsorbing a tungsten-containingcompound and a reducing compound as described above. Preferably,tungsten bulk layer 212 is deposited by a CVD process. Tungsten bulklayer 212 generally has a thickness in the range from about 100 Å toabout 10,000 Å, preferably in the range from about 1,000 Å to about5,000 Å. A more detailed description of tungsten deposition using aconventional CVD process or an ALD process followed by a CVD process maybe found in commonly assigned U.S. Pat. Nos. 6,099,904, 6,156,382, and6,551,929, which are all incorporated herein by reference.

Following deposition, the top portion of the resulting structure may beplanarized. A chemical mechanical polishing (CMP) apparatus may be used,such as the MIRRA® System available from Applied Materials, Inc., SantaClara, Calif. Portions of the tungsten bulk layer 212 are removed fromthe top of the structure leaving a fully planar surface. Optionally, theintermediate surfaces of the structure may be planarized between thedepositions of the subsequent layers described above.

Hardware

FIG. 8 is a schematic cross-sectional view of one embodiment of aprocess chamber 780 including a gas delivery apparatus 830 adapted forcyclic deposition, such as ALD. Chamber 780 and other chambers capableof performing ALD performing ALD processes, may be used during processes300, 400, 500, 600 and 700, as described above. A detailed descriptionfor a process chamber 780 is described in commonly assigned U.S. Pat.No. 6,916,398, and commonly assigned U.S. Ser. No. 10/281,079, filedOct. 25, 2002, and published as US 2003-0121608, which are bothincorporated herein in their entirety by reference. The terms atomiclayer deposition (ALD) and rapid chemical vapor deposition as usedherein refer to the sequential introduction of reactants to deposit athin layer over a substrate structure. The sequential introduction ofreactants may be repeated to deposit a plurality of thin layers to forma conformal layer to a desired thickness. The process chamber 780 mayalso be adapted for other deposition techniques.

The process chamber 780 comprises a chamber body 782 having sidewalls784 and a bottom 786. A slit valve 788 in the process chamber 780provides access for a robot (not shown) to deliver and retrieve asubstrate 790, such as a semiconductor wafer with a diameter of 200 mmor 300 mm or a glass substrate, from the process chamber 780.

A substrate support 792 supports the substrate 790 on a substratereceiving surface 791 in the process chamber 780. The substrate support792 is mounted to a lift motor 814 to raise and lower the substratesupport 792 and a substrate 790 disposed thereon. A lift plate 816connected to a lift motor 818 is mounted in the process chamber 780 andraises and lowers pins 820 movably disposed through the substratesupport 792. The pins 820 raise and lower the substrate 790 over thesurface of the substrate support 792. The substrate support 792 mayinclude a vacuum chuck, an electrostatic chuck, or a clamp ring forsecuring the substrate 790 to the substrate support 792 duringprocessing.

The substrate support 792 may be heated to increase the temperature of asubstrate 790 disposed thereon. For example, the substrate support 792may be heated using an embedded heating element, such as a resistiveheater, or may be heated using radiant heat, such as heating lampsdisposed above the substrate support 792. A purge ring 822 may bedisposed on the substrate support 792 to define a purge channel 824which provides a purge gas to a peripheral portion of the substrate 790to prevent deposition thereon.

A gas delivery apparatus 830 is disposed at an upper portion of thechamber body 782 to provide a gas, such as a process gas and/or a purgegas, to the chamber 780. A vacuum system 878 is in communication with apumping channel 879 to evacuate any desired gases from the processchamber 780 and to help maintain a desired pressure or a desiredpressure range inside a pumping zone 866 of the process chamber 780.

In one embodiment, the process chamber depicted by FIG. 8 permits theprocess gas and/or purge gas to enter the process chamber 780 normal(i.e., 900) with respect to the plane of the substrate 790 via the gasdelivery apparatus 830. Therefore, the surface of substrate 790 issymmetrically exposed to gases that allow uniform film formation onsubstrates. The process gas includes a first reagent during one pulseand includes a second reagent in another pulse.

Process chamber 780, depicted in FIG. 8, produces a uniform film andemploys a short cycle time (as quick as tenths of a second pulse) topurge and short time to dose the wafer to saturation with precursors.The short dosing time is important in process 500 and 600 because manyof the ruthenium-containing compounds have the inherent characteristicof a low vapor pressure. The low vapor pressure correlates to lessprecursor saturating the carrier gas per time and temperature,therefore, more time is needed to saturate the surface of the wafer withruthenium-containing precursor (e.g.,bis(2,4-dimethylpentadienyl)ruthenium) than a traditional precursor witha higher vapor pressure (e.g., TiCl₄).

In one embodiment, the gas delivery apparatus 830 comprises a chamberlid 832. The chamber lid 832 includes an expanding channel 834 extendingfrom a central portion of the chamber lid 832 and a bottom surface 860extending from the expanding channel 834 to a peripheral portion of thechamber lid 832. The bottom surface 860 is sized and shaped tosubstantially cover a substrate 790 disposed on the substrate support792. The expanding channel 834 has gas inlets 836A, 836B to provide gasflows from two similar valves 842A, 842B. The gas flows from the valves842A, 842B may be provided together and/or separately.

In one configuration, valve 842A and valve 842B are coupled to separatereactant gas sources but are preferably coupled to the same purge gassource. For example, valve 842A is coupled to reactant gas source 838and valve 842B is coupled to reactant gas source 839, and both valves842A, 842B are coupled to purge gas source 840. Each valve 842A, 842Bincludes a delivery line 843A, 843B having a valve seat assembly 844A,844B and includes a purge line 845A, 845B having a valve seat assembly846A, 846B. The delivery line 843A, 843B is in communication with thereactant gas source 838, 839 and is in communication with the gas inlet836A, 836B of the expanding channel 834. The valve seat assembly 844A,844B of the delivery line 843A, 843B controls the flow of the reactantgas from the reactant gas source 838, 839 to the expanding channel 834.The purge line 845A, 845B is in communication with the purge gas source840 and intersects the delivery line 843A, 843B downstream of the valveseat assembly 844A, 844B of the delivery line 843A, 843B. The valve seatassembly 846A, 846B of the purge line 845A, 845B controls the flow ofthe purge gas from the purge gas source 840 to the delivery line 843A,843B. If a carrier gas is used to deliver reactant gases from thereactant gas source 838, 839, preferably the same gas is used as acarrier gas and a purge gas (i.e., an argon gas used as a carrier gasand a purge gas).

Each valve seat assembly 844A, 844B, 846A, 846B may comprise a diaphragmand a valve seat. The diaphragm may be biased open or closed and may beactuated closed or open respectively. The diaphragms may bepneumatically actuated or may be electrically actuated. Examples ofpneumatically actuated valves include pneumatically actuated valvesavailable from Fujiken and Veriflow. Examples of electrically actuatedvalves include electrically actuated valves available from Fujiken.Programmable logic controllers 848A, 848B may be coupled to the valves842A, 842B to control actuation of the diaphragms of the valve seatassemblies 844A, 844B, 846A, 846B of the valves 842A, 842B.Pneumatically actuated valves may provide pulses of gases in timeperiods as low as about 0.020 second. Electrically actuated valves mayprovide pulses of gases in time periods as low as about 0.005 second. Anelectrically actuated valve typically requires the use of a drivercoupled between the valve and the programmable logic controller.

Each valve 842A, 842B may be a zero dead volume valve to enable flushingof a reactant gas from the delivery line 843A, 843B when the valve seatassembly 844A, 844B of the valve is closed. For example, the purge line845A, 845B may be positioned adjacent the valve seat assembly 844A, 844Bof the delivery line 843A, 843B. When the valve seat assembly 844A, 144Bis closed, the purge line 845A, 845B may provide a purge gas to flushthe delivery line 843A, 843B. In the embodiment shown, the purge line845A, 845B is positioned slightly spaced from the valve seat assembly844A, 844B of the delivery line 843A, 843B so that a purge gas is notdirectly delivered into the valve seat assembly 844A, 844B when open. Azero dead volume valve as used herein is defined as a valve which hasnegligible dead volume (i.e., not necessary zero dead volume).

Each valve 842A, 842B may be adapted to provide a combined gas flowand/or separate gas flows of the reactant gas 838, 839 and the purge gas840. In reference to valve 842A, one example of a combined gas flow ofthe reactant gas 838 and the purge gas 840 provided by valve 842Acomprises a continuous flow of a purge gas from the purge gas source 840through purge line 845A and pulses of a reactant gas from the reactantgas source 838 through delivery line 843A. The continuous flow of thepurge gas may be provided by leaving diaphragm of the valve seatassembly 846A of the purge line 845A open. The pulses of the reactantgas from the reactant gas source 838 may be provided by opening andclosing the diaphragm of the valve seat 844A of the delivery line 843A.In reference to valve 842A, one example of separate gas flows of thereactant gas 838 and the purge gas 840 provided by valve 842A comprisespulses of a purge gas from the purge gas source 840 through purge line845A and pulses of a reactant gas from the reactant gas source 838through delivery line 843A. The pulses of the purge gas may be providedby opening and closing the diaphragm of the valve seat assembly 846A ofthe purge line 845A open. The pulses of the reactant gas from thereactant gas source 838 may be provided by opening and closing thediaphragm valve seat 844A of the delivery line 843A.

The delivery lines 843A, 843B of the valves 842A, 842B may be coupled tothe gas inlets 836A, 836B through gas conduits 850A, 850B. The gasconduits 850A, 850B may be integrated or may be separate from the valves842A, 842B. In one aspect, the valves 842A, 842B are coupled in closeproximity to the expanding channel 834 to reduce any unnecessary volumeof the delivery line 843A, 843B and the gas conduits 850A, 850B betweenthe valves 842A, 842B and the gas inlets 836A, 836B.

In FIG. 8, the expanding channel 834 comprises a channel which has aninner diameter which increases from an upper portion 837 to a lowerportion 835 of the expanding channel 834 adjacent the bottom surface 860of the chamber lid 832.

In one specific embodiment, the inner diameter of the expanding channel834 for a chamber adapted to process 200 mm diameter substrates isbetween about 0.2 inches (0.51 cm) and about 1.0 inches (2.54 cm), morepreferably between about 0.3 inches (0.76 cm) and about 0.9 inches (2.29cm) and more preferably between about 0.3 inches (0.76 cm) and about 0.5inches (1.27 cm) at the upper portion 837 of the expanding channel 834and between about 0.5 inches (1.27 cm) and about 3.0 inches (7.62 cm),preferably between about 0.75 inches (1.91 cm) and about 2.5 inches(6.35 cm) and more preferably between about 1.1 inches (2.79 cm) andabout 2.0 inches (5.08 cm) at the lower portion 835 of the expandingchannel 834.

In another specific embodiment, the inner diameter of the expandingchannel 834 for a chamber adapted to process 300 mm diameter substratesis between about 0.2 inches (0.51 cm) and about 1.0 inches (2.54 cm),more preferably between about 0.3 inches (0.76 cm) and about 0.9 inches(2.29 cm) and more preferably between about 0.3 inches (0.76 cm) andabout 0.5 inches (1.27 cm) at the upper portion 837 of the expandingchannel 134 and between about 0.5 inches (1.27 cm) and about 3.0 inches(7.62 cm), preferably between about 0.75 inches (1.91 cm) and about 2.5inches (6.35 cm) and more preferably between about 1.2 inches (3.05 cm)and about 2.2 inches (5.59 cm) at the lower portion 835 of the expandingchannel 834 for a 300 mm substrate. In general, the above dimensionapply to an expanding channel adapted to provide a total gas flow ofbetween about 500 sccm and about 3,000 sccm.

In other specific embodiments, the dimension may be altered toaccommodate a certain gas flow therethrough. In general, a larger gasflow will require a larger diameter expanding channel. In oneembodiment, the expanding channel 834 may be shaped as a truncated cone(including shapes resembling a truncated cone). Whether a gas isprovided toward the walls of the expanding channel 834 or directlydownward towards the substrate, the velocity of the gas flow decreasesas the gas flow travels through the expanding channel 834 due to theexpansion of the gas. The reduction of the velocity of the gas flowhelps reduce the likelihood the gas flow will blow off reactantsabsorbed on the surface of the substrate 790.

Not wishing to be bound by theory, it is believed that the diameter ofthe expanding channel 834, which is gradually increasing from the upperportion 837 to the lower portion 835 of the expanding channel, allowsless of an adiabatic expansion of a gas through the expanding channel834 which helps to control the temperature of the gas. For instance, asudden adiabatic expansion of a gas delivered through the gas inlet836A, 836B into the expanding channel 834 may result in a drop in thetemperature of the gas which may cause condensation of the precursorvapor and formation of particles. On the other hand, a graduallyexpanding channel 834 according to embodiments of the present inventionis believed to provide less of an adiabatic expansion of a gas.Therefore, more heat may be transferred to or from the gas, and, thus,the temperature of the gas may be more easily controlled by controllingthe surrounding temperature of the gas (i.e., controlling thetemperature of the chamber lid 832). The gradually expanding channel maycomprise one or more tapered inner surfaces, such as a tapered straightsurface, a concave surface, a convex surface, or combinations thereof ormay comprise sections of one or more tapered inner surfaces (i.e., aportion tapered and a portion non-tapered).

In one embodiment, the gas inlets 836A, 836B are located adjacent theupper portion 837 of the expanding channel 834. In other embodiments,one or more gas inlets may be located along the length of the expandingchannel 834 between the upper portion 837 and the lower portion 835.

In FIG. 8, a control unit 880, such as a programmed personal computer,work station computer, or the like, may be coupled to the processchamber 780 to control processing conditions. For example, the controlunit 880 may be configured to control flow of various process gases andpurge gases from gas sources 838, 839, 840 through the valves 842A, 842Bduring different stages of a substrate process sequence. Illustratively,the control unit 880 comprises a central processing unit (CPU) 882,support circuitry 884, and memory 886 containing associated controlsoftware 883.

The control unit 880 may be one of any form of general purpose computerprocessor that can be used in an industrial setting for controllingvarious chambers and sub-processors. The CPU 882 may use any suitablememory 886, such as random access memory, read only memory, floppy diskdrive, compact disc drive, hard disk, or any other form of digitalstorage, local or remote. Various support circuits may be coupled to theCPU 882 for supporting the process chamber 780. The control unit 880 maybe coupled to another controller that is located adjacent individualchamber components, such as the programmable logic controllers 848A,848B of the valves 842A and 842B. Bi-directional communications betweenthe control unit 880 and various other components of the process chamber780 are handled through numerous signal cables collectively referred toas signal buses 888, some of which are illustrated in FIG. 8. Inaddition to control of process gases and purge gases from gas sources838, 839, 840 and from the programmable logic controllers 848A, 848B ofthe valves 842A, 842B, the control unit 880 may be configured to beresponsible for automated control of other activities used in waferprocessing, such as wafer transport, temperature control, chamberevacuation, among other activities, some of which are describedelsewhere herein.

A tungsten nucleation layer as described above has shown particularutility when integrated with traditional bulk fill techniques to formfeatures with excellent film properties. An integration scheme caninclude ALD or cyclical deposition nucleation with bulk fill CVD or PVDprocesses. Integrated processing systems capable of performing such anintegration scheme include an Endura®, Endura SL®, Centura® andProducer® processing systems, each available from Applied Materials,Inc. located in Santa Clara, Calif. Any of these systems can beconfigured to include at least one ALD chamber for depositing thetungsten nucleation layer and at least one CVD chamber or PVD chamberfor tungsten bulk fill.

FIG. 9A is a schematic top-view diagram of an exemplary multi-chamberprocessing system 900. A similar multi-chamber processing system isdisclosed in commonly assigned U.S. Pat. No. 5,186,718, which isincorporated by reference herein. The system 900 generally includes loadlock chambers 902 and 904 for the transfer of substrates into and outfrom the system 900. Typically, since the system 900 is under vacuum,the load lock chambers 902 and 904 may “pump down” the substratesintroduced into the system 900. A first robot 910 may transfer thesubstrates between the load lock chambers 902 and 904, and a first setof one or more substrate processing chambers 912, 914, 916 and 918 (fourare shown). Each processing chamber 912, 914, 916 and 918, can beoutfitted to perform a number of substrate processing operations such asALD, CVD, PVD, etch, pre-clean, de-gas, orientation and other substrateprocesses. The first robot 910 also transfers substrates to/from one ormore transfer chambers 922 and 924.

The transfer chambers 922 and 924 are used to maintain ultrahigh vacuumconditions while allowing substrates to be transferred within the system900. A second robot 930 may transfer the substrates between the transferchambers 922 and 924 and a second set of one or more processing chambers932, 934, 936 and 938. Similar to processing chambers 912, 914, 916 and918, the processing chambers 932, 934, 936 and 938 can be outfitted toperform a variety of substrate processing operations, such as ALD, CVD,PVD, etch, pre-clean, de-gas, and orientation, for example. Any of thesubstrate processing chambers 912, 914, 916, 918, 932, 934, 936 and 938may be removed from the system 900 if not necessary for a particularprocess to be performed by the system 900.

In one arrangement of an embodiment, each processing chambers 916 and918 may be an anneal chamber and each processing chambers 912 and 914may be an ALD chamber, CVD chamber or PVD chamber adapted to deposit abarrier layer, such as tantalum nitride. Each processing chambers 932and 938 may be an ALD chamber, CVD chamber or PVD chamber adapted todeposit a ruthenium layer on the barrier layer. Further, each processingchambers 934 and 936 may be an ALD chamber, CVD chamber, PVD chamber orcombinations thereof adapted to deposit a tungsten nucleation layerand/or tungsten bulk layer on the ruthenium layer. Processing chambers934 and 936 may be an ALD/CVD hybrid chamber, such as disclosed incommonly assigned U.S. Ser. No. 10/712,690, filed Nov. 13, 2003, andissued as U.S. Pat. No. 7,204,886, which is incorporated herein byreference. Another process chamber configured to operate in both an ALDmode as well as a conventional CVD mode is described in commonlyassigned U.S. Ser. No. 10/016,300, filed on Dec. 12, 2001, and issued asU.S. Pat. No. 6,878,206, which is incorporated herein by reference. In apreferred embodiment, processing chambers 912 and 914 are each an ALDchamber or a PVD chamber, processing chambers 932, 934, 936 and 938 areeach an ALD chamber.

In another arrangement of the embodiment, each processing chambers 916and 918 may be an anneal chamber and each processing chambers 912 and914 may be an ALD chamber, CVD chamber or PVD chamber adapted to deposita ruthenium layer on a barrier layer, such as tantalum nitride. Thebarrier layer may be deposited on the substrate in a separate system(not shown). Each processing chambers 932 and 938 may be an ALD chamberadapted to deposit a tungsten nucleation layer. Each processing chamber934 and 936 may be an ALD chamber, a CVD chamber or a PVD chamberadapted to form a tungsten bulk layer. In a preferred embodiment,processing chambers 912 and 914 are each an ALD chamber, processingchambers 932 and 938 are each an ALD chamber, and process chambers 934and 936 are each a CVD chamber. Any one particular arrangement of thesystem 900 is provided to illustrate the invention and should not beused to limit the scope of the invention.

FIG. 9B is a schematic top-view diagram of an exemplary multi-chamberprocessing system 950. The system 950 generally includes load lockchambers 952 and 954 for the transfer of substrates into and out fromthe system 950. Typically, since the system 950 is under vacuum, theload lock chambers 952 and 954 may “pump down” the substrates introducedinto the system 950. A robot 960 may transfer the substrates between theload lock chambers 952 and 954, and substrate processing chambers 962,964, 966, 968, 970 and 972. Each processing chamber 962, 964, 966, 968,970 and 972 can be outfitted to perform a number of substrate processingoperations such as ALD, CVD, PVD, etch, pre-clean, de-gas, heat,orientation and other substrate processes. The robot 960 also transferssubstrates to/from a transfer chamber 956. Any of the substrateprocessing chambers 962, 964, 966, 968, 970 and 972 may be removed fromthe system 950 if not necessary for a particular process to be performedby the system 950.

In one arrangement of an embodiment, each processing chambers 964 and970 may be an ALD chamber, CVD chamber or PVD chamber adapted to deposita barrier layer, such as tantalum nitride and each processing chambers966 and 968 may be an ALD chamber, a CVD chamber or a PVD chamberadapted to form ruthenium layer on the barrier layer. In anotherarrangement of an embodiment, each processing chambers 964 and 970 maybe an ALD chamber adapted to deposit a tungsten nucleation layer andeach processing chambers 966 and 968 may be an ALD chamber, a CVDchamber or a PVD chamber adapted to form a bulk tungsten layer. In oneexample, two systems are configured such that the first system depositsa barrier layer and a ruthenium layer and the second system deposits atungsten nucleation layer and a tungsten bulk layer.

In another arrangement of the embodiment, each processing chambers 962and 972 may be an anneal chamber and processing chamber 964 may be anALD chamber, CVD chamber or PVD chamber adapted to deposit a barrierlayer, such as tantalum nitride. Processing chamber 966 may be an ALDchamber, CVD chamber or PVD chamber adapted to deposit a ruthenium layeron the barrier layer. Processing chamber 968 may be an ALD chamber, aCVD chamber or a PVD chamber adapted to form tungsten nucleation layeron the ruthenium layer, while processing chamber 970 may be an ALDchamber, a CVD chamber or a PVD chamber adapted to form tungsten bulklayer on the tungsten nucleation layer. Any one particular arrangementof the system 950 is provided to illustrate the invention and should notbe used to limit the scope of the invention.

Hypothetical Experiments

Experiments in this section were conducted on substrates initiallyprepared by thermally growing a silicon dioxide layer with a thicknessof 3,000 Å.

Experimental section for TaN-ALD: A barrier layer, such as a tantalumnitride layer, was deposited on the silicon dioxide layer by an ALDprocess. The tantalum nitride layer was deposited by sequential pulsinga tantalum precursor (e.g., PDMAT) and a nitrogen precursor (e.g.,ammonia) into the process chamber. A substrate was placed in an ALDprocess chamber and exposed to an ALD cycle that included a pulse ofPDMAT was 0.5 second, a pulse of purge gas (e.g., Ar) for 1.0 second, apulse of ammonia for 0.5 second and a pulse of the purge gas for 1.0second. The ALD cycle was repeated about 20 times to form a tantalumnitride layer with a thickness of 10 Å and with a sheet resistancegreater than 20,000 Ω/sq.

Experimental section for Ru-ALD: The substrate was placed into a secondALD chamber equipped to deposit a ruthenium layer. The ruthenium layerwas deposited on the tantalum nitride layer by sequentially exposing thesubstrate to a ruthenium precursor (e.g., Cp₂Ru) and a reagent (e.g.,B₂H₆). During the precursor transfer, the chamber pressure wasmaintained at less than 5×10⁻⁶ Torr and the substrate temperature at350° C. The chamber spacing (distance between the wafer and the top ofchamber body) was 230 mils. An ALD cycle included the following steps.Argon carrier gas containing the ruthenium precursor was exposed to thesubstrate for 4 seconds at a flow rate of 100 sccm. The chamber waspurged with argon for 0.5 second at a flow rate of 2,000 sccm and thenthe substrate was exposed to the reagent for 1 second at a flow rate of200 sccm. For the final step in the cycle, the chamber was purged withargon for 0.5 second at a flow rate of 2,000 sccm. The ALD process wasyielded after the repetition of 100 cycles to form a ruthenium layerwith a thickness of 50 Å.

W-deposition: Experimental section 1: A substrate containing theruthenium layer deposited on the tantalum nitride barrier layer asdescribed above was transferred into a third ALD process chamber. Thesubstrate surface was exposed to a soak process by flowing 150 sccm B₂H₆and 150 sccm H₂ at 5 Torr and 300° C. for about 10 seconds. Next, atungsten nucleation layer was formed on the ruthenium layer bysequentially exposing the substrate to a tungsten precursor (e.g., WF₆)and a reductant (e.g., B₂H₆). The tungsten precursor was combined with acarrier gas (e.g., Ar) with a total flow rate of 320 sccm (i.e., 20 sccmWF₆ and 300 sccm Ar). The reductant was combined with a carrier gas(e.g., H₂) with a total flow rate of 300 sccm (i.e., 150 sccm B₂H₆ and150 sccm H₂). The process chamber was maintained at 5 Torr and thesubstrate at 300° C. The ALD cycle included a pulse of the tungstenprecursor for 0.2 second, a pulse of purge gas (e.g., Ar) for 0.5second, a pulse of the reductant for 0.2 second and a pulse of the purgegas. The purge gas maintained a flow rate of 500 sccm. The ALD cycle wasrepeated until the nucleation layer had a thickness of about 50 Å.Subsequently, the substrate surface was exposed to a soak process byflowing 150 sccm B₂H₆ and 150 sccm H₂ at 5 Torr and 300° C. for about 10seconds. Finally, a tungsten bulk layer was deposited on the nucleationlayer using CVD to a thickness of about 2,500 Å.

W-deposition: Experimental section 2: A substrate containing theruthenium layer deposited on the tantalum nitride barrier layer asdescribed above was transferred into a third ALD process chamber. Thesubstrate surface was exposed to a soak process by flowing 75 sccm SiH₄and 500 sccm H₂ at 90 Torr and 350° C. for about 30 seconds. Next, atungsten nucleation layer was formed on the ruthenium layer bysequentially exposing the substrate to a tungsten precursor (e.g., WF₆)and a reductant (e.g., SiH₄). The tungsten precursor was combined with acarrier gas (e.g., Ar) with a total flow rate of 330 sccm (i.e., 30 sccmWF₆ and 300 sccm Ar). The reductant was combined with a carrier gas(e.g., H₂) with a total flow rate of 320 sccm (i.e., 20 sccm SiH₄ and300 sccm H₂). The process chamber was maintained at 5 Torr and thesubstrate at 300° C. The ALD cycle included a pulse of the tungstenprecursor for 0.3 second, a pulse of purge gas (e.g., Ar) for 0.5second, a pulse of the reductant for 0.3 second and a pulse of the purgegas. The purge gas maintained a flow rate of 500 sccm. The ALD cycle wasrepeated until the nucleation layer had a thickness of about 100 Å.Subsequently, the substrate surface was exposed to a soak process byflowing 150 sccm B₂H₆ and 150 sccm H₂ at 5 Torr and 300° C. for about 10seconds. Finally, a tungsten bulk layer was deposited on the nucleationlayer using CVD to a thickness of about 2,500 Å.

W-deposition: Experimental section 3: A substrate containing theruthenium layer deposited on the tantalum nitride barrier layer asdescribed above was transferred into a third ALD process chamber. Thesubstrate surface was exposed to a soak process by flowing 75 sccm SiH₄and 500 sccm H₂ at 90 Torr and 300° C. for about 60 seconds. Next, atungsten nucleation layer was formed on the ruthenium-containing layerby sequentially exposing the substrate to a tungsten precursor (e.g.,WF₆) and a reductant (e.g., SiH₄). The tungsten precursor was combinedwith a carrier gas (e.g., Ar) with a total flow rate of 320 sccm (i.e.,20 sccm WF₆ and 300 sccm Ar). The reductant was combined with a carriergas (e.g., H₂) with a total flow rate of 315 sccm (i.e., 15 sccm SiH₄and 300 sccm H₂). The process chamber was maintained at 20 Torr and thesubstrate at 300° C. The ALD cycle included a pulse of the tungstenprecursor for 0.5 second, a pulse of purge gas (e.g., Ar) for 0.5second, a pulse of the reductant for 0.5 second and a pulse of the purgegas. The purge gas maintained a flow rate of 500 sccm. The ALD cycle wasrepeated until the nucleation layer had a thickness of about 75 Å.Subsequently, the substrate surface was exposed to a soak process byflowing 75 sccm SiH₄ and 500 sccm H₂ at 90 Torr and 300° C. for about 60seconds. Finally, a tungsten bulk layer was deposited on the nucleationlayer using CVD to a thickness of about 2,500 Å.

W-deposition: Experimental section 4: A substrate containing theruthenium layer deposited on the tantalum nitride barrier layer asdescribed above was transferred into a third ALD process chamber. Thesubstrate surface was exposed to a soak process by flowing 150 sccm B₂H₆and 150 sccm H₂ at 15 Torr and 300° C. for about 10 seconds. Next, atungsten nucleation layer was formed on the ruthenium-containing layerby sequentially exposing the substrate to a tungsten precursor (e.g.,WF₆) and a reductant (e.g., SiH₄). The tungsten precursor was combinedwith a carrier gas (e.g., Ar) with a total flow rate of 320 sccm (i.e.,20 sccm WF₆ and 300 sccm Ar). The reductant was combined with a carriergas (e.g., H₂) with a total flow rate of 315 sccm (i.e., 15 sccm SiH₄and 300 sccm H₂). The process chamber was maintained at 15 Torr and thesubstrate at 300° C. The ALD cycle included a pulse of the tungstenprecursor for 0.3 second, a pulse of purge gas (e.g., Ar) for 0.5second, a pulse of the reductant for 0.3 second and a pulse of the purgegas. The purge gas maintained a flow rate of 500 sccm. The ALD cycle wasrepeated until the nucleation layer had a thickness of about 50 Å.Subsequently, the substrate surface was exposed to a soak process byflowing 75 sccm SiH₄ and 500 sccm H₂ at 90 Torr and 300° C. for about 60seconds. Finally, a tungsten bulk layer was deposited on the nucleationlayer using CVD to a thickness of about 2,500 Å.

W-deposition: Experimental section 5: A substrate containing theruthenium layer deposited on the tantalum nitride barrier layer asdescribed above was transferred into a third ALD process chamber. Thesubstrate surface was exposed to a soak process by flowing 150 sccm B₂H₆and 150 sccm H₂ at 15 Torr and 300° C. for about 10 seconds. Next, atungsten nucleation layer was formed on the ruthenium-containing layerby sequentially exposing the substrate to a tungsten precursor (e.g.,WF₆) and a reductant (e.g., SiH₄). The tungsten precursor was combinedwith a carrier gas (e.g., Ar) with a total flow rate of 320 sccm (i.e.,20 sccm WF₆ and 300 sccm Ar). The reductant was combined with a carriergas (e.g., H₂) with a total flow rate of 315 sccm (i.e., 15 sccm SiH₄and 300 sccm H₂). The process chamber was maintained at 15 Torr and thesubstrate at 300° C. The ALD cycle included a pulse of the tungstenprecursor for 0.3 second, a pulse of purge gas (e.g., Ar) for 0.5second, a pulse of the reductant for 0.3 second and a pulse of the purgegas. The purge gas maintained a flow rate of 500 sccm. The ALD cycle wasrepeated until the nucleation layer had a thickness of about 50 Å.Subsequently, the substrate surface was exposed to a soak process byflowing 25 sccm B₂H₆ and 500 sccm H₂ at 10 Torr and 300° C. for about 20seconds. Finally, a tungsten bulk layer was deposited on the nucleationlayer using CVD to a thickness of about 2,500 Å.

While foregoing is directed to the preferred embodiment of the presentinvention, other and further embodiments of the invention may be devisedwithout departing from the basic scope thereof, and the scope thereof isdetermined by the claims that follow.

1. A method for depositing materials on a substrate surface, comprising:depositing a barrier layer comprising tantalum or titanium on asubstrate; depositing a ruthenium layer on the barrier layer; anddepositing a tungsten bulk layer over the ruthenium layer.
 2. The methodof claim 1, wherein the barrier layer comprises tantalum nitridedeposited by an atomic layer deposition process and the tungsten bulklayer is deposited by a chemical vapor deposition process.
 3. The methodof claim 1, wherein the ruthenium layer is deposited by an atomic layerdeposition process.
 4. The method of claim 3, further comprisingexposing the substrate to a ruthenium precursor during the atomic layerdeposition process, wherein the ruthenium precursor is selected from thegroup consisting of bis(cyclopentadienyl)ruthenium compounds,bis(alkylcyclopentadienyl)ruthenium compounds,bis(dialkylcyclopentadienyl)ruthenium compounds,bis(pentadienyl)ruthenium compounds, bis(alkylpentadienyl)rutheniumcompounds, and bis(dialkylpentadienyl)ruthenium compounds.
 5. The methodof claim 4, wherein the ruthenium precursor is selected from the groupconsisting of bis(cyclopentadienyl)ruthenium,bis(methylcyclopentadienyl)ruthenium,bis(ethylcyclopentadienyl)ruthenium,bis(pentamethylcyclopentadienyl)ruthenium,bis(2,4-dimethylpentadienyl)ruthenium,bis(2,4-diethylpentadienyl)ruthenium, derivatives thereof, andcombinations thereof.
 6. The method of claim 4, further comprisingexposing the substrate to a reagent during the atomic layer depositionprocess, wherein the reagent is selected from the group consisting ofhydrogen, silane, disilane, diborane, derivatives thereof, andcombinations thereof.
 7. The method of claim 3, further comprisingexposing the ruthenium layer to a soak compound during a soak processprior to depositing the tungsten bulk layer.
 8. The method of claim 7,wherein the ruthenium layer is exposed to the soak compound for a timeperiod within a range from about 5 seconds to about 90 seconds duringthe soak process.
 9. The method of claim 8, wherein the soak compound isselected from the group consisting of hydrogen, borane, diborane,silane, disilane, trisilane, derivatives thereof, and combinationsthereof.
 10. The method of claim 1, further comprising depositing atungsten nucleation layer on the ruthenium layer prior to depositing thetungsten bulk layer thereto.
 11. The method of claim 10, wherein thetungsten nucleation layer is deposited by sequentially exposing thesubstrate to a tungsten precursor and a reducing gas during an atomiclayer deposition process.
 12. The method of claim 11, wherein thereducing gas comprises a reagent selected from the group consisting ofhydrogen, silane, disilane, trisilane, borane, diborane, triethylborane,derivatives thereof, and combinations thereof.
 13. The method of claim12, wherein the tungsten precursor comprises tungsten hexafluoride andthe reducing gas comprises silane or diborane.
 14. The method of claim10, further comprising exposing the tungsten nucleation layer to a soakcompound during a soak process prior to depositing the tungsten bulklayer, wherein the soak compound is selected from the group consistingof hydrogen, borane, diborane, silane, disilane, trisilane, derivativesthereof, and combinations thereof.
 15. A method for depositing materialson a substrate surface, comprising: depositing a barrier layercomprising tantalum or titanium on a substrate; depositing a cobaltlayer on the barrier layer; and depositing a tungsten bulk layer overthe cobalt layer.
 16. The method of claim 15, wherein the barrier layercomprises tantalum nitride deposited by an atomic layer depositionprocess.
 17. The method of claim 16, wherein the tungsten bulk layer isdeposited by a chemical vapor deposition process.
 18. The method ofclaim 15, wherein the cobalt layer is deposited by an atomic layerdeposition process.
 19. The method of claim 18, further comprisingexposing the substrate to a cobalt precursor during the atomic layerdeposition process, wherein the cobalt precursor is selected from thegroup consisting of bis(cyclopentadienyl)cobalt, (cyclopentadienyl)(cyclohexadienyl)cobalt, cyclopentadienyl (1,3-hexadienyl)cobalt,(cyclobutadienyl)(cyclopentadienyl)cobalt,bis(methylcyclopentadienyl)cobalt, (cyclopentadienyl)(5-methylcyclopentadienyl)cobalt,bis(ethylene)(pentamethylcyclopentadienyl)cobalt, derivatives thereof.20. The method of claim 18, further comprising exposing the cobalt layerto a soak compound during a soak process prior to depositing thetungsten bulk layer.
 21. The method of claim 20, wherein the cobaltlayer is exposed to the soak compound for a time period within a rangefrom about 5 seconds to about 90 seconds during the soak process, andthe soak compound is selected from the group consisting of hydrogen,borane, diborane, silane, disilane, trisilane, derivatives thereof, andcombinations thereof.
 22. The method of claim 15, further comprisingdepositing a tungsten nucleation layer on the cobalt layer prior todepositing the tungsten bulk layer thereto.
 23. The method of claim 22,wherein the tungsten nucleation layer is deposited by an atomic layerdeposition process.
 24. The method of claim 22, further comprisingexposing the tungsten nucleation layer to a soak compound during a soakprocess prior to depositing the tungsten bulk layer, wherein the soakcompound is selected from the group consisting of hydrogen, borane,diborane, silane, disilane, trisilane, derivatives thereof, andcombinations thereof.
 25. A method for depositing materials on asubstrate surface, comprising: depositing a tantalum-containing barrierlayer on a substrate; depositing a noble metal layer comprisingruthenium or cobalt on the tantalum-containing barrier layer during anatomic layer deposition process; exposing the noble metal layer to asoak compound during a soak process, the soak compound is selected fromthe group consisting of hydrogen, borane, diborane, silane, disilane,trisilane, derivatives thereof, and combinations thereof; and depositinga tungsten bulk layer over the noble metal layer.